Integrated Silicon Solution, Inc. Memory IS45S32400E-7BLA1-TR

Description
SDRAM Memory IC 128Mb (4M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
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Description
SDRAM Memory IC 128Mb (4M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
Request a Quote
Datasheet
Datasheet Summary
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The IS45S32400E-7BLA1-TR is a 128Mb synchronous DRAM memory chip organized as 4M x 32 bits across four banks. It operates with a single power supply of 3.3V ¬± 0.3V and features a fully synchronous interface, with all signals referenced to the positive edge of the clock. The device supports clock frequencies of 166, 143, and 133 MHz, and offers programmable burst lengths of 1, 2, 4, 8, or full page, along with both sequential and interleave burst sequences. This memory chip includes an auto-refresh mode and a self-refresh capability, with 4096 refresh cycles every 16ms for A2 grade or 64ms for commercial and industrial grades. It also allows for random column addressing every clock cycle and supports programmable CAS latency of 2 or 3 clocks. The device is available in multiple package options, including an 86-pin TSOP-II and a 90-ball TF-BGA, and is suitable for various operating temperature ranges, including commercial (0¬8C to +70¬8C) and industrial (-40¬8C to +85¬8C). Engineers considering this memory chip should note its high-speed data transfer capabilities and flexibility in burst operations, making it suitable for applications requiring efficient memory access.

Datasheet Summary
Powered by GS/AI

The IS45S32400E-7BLA1-TR is a 128Mb synchronous DRAM memory chip organized as 4M x 32 bits across four banks. It operates with a single power supply of 3.3V ¬± 0.3V and features a fully synchronous interface, with all signals referenced to the positive edge of the clock. The device supports clock frequencies of 166, 143, and 133 MHz, and offers programmable burst lengths of 1, 2, 4, 8, or full page, along with both sequential and interleave burst sequences. This memory chip includes an auto-refresh mode and a self-refresh capability, with 4096 refresh cycles every 16ms for A2 grade or 64ms for commercial and industrial grades. It also allows for random column addressing every clock cycle and supports programmable CAS latency of 2 or 3 clocks. The device is available in multiple package options, including an 86-pin TSOP-II and a 90-ball TF-BGA, and is suitable for various operating temperature ranges, including commercial (0¬8C to +70¬8C) and industrial (-40¬8C to +85¬8C). Engineers considering this memory chip should note its high-speed data transfer capabilities and flexibility in burst operations, making it suitable for applications requiring efficient memory access.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS45S32400E-7BLA1-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 128Mb (4M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)

SDRAM Memory IC 128Mb (4M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)

Buy Now Datasheet
Memory - IS45S32400E-7BLA1-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)

SDRAM Memory IC 128Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS45S32400E-7BLA1-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS45S32400E-7BLA1-TR
Integrated Circuits (ICs) - Memory IS45S32400E-7BLA1-TR
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS45S32400E-7BLA1-TR-ND IS45S32400E-7BLA1-TR IS45S32400E-7BLA1-TR IS45S32400E-7BLA1-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 90-TFBGA BGA; 90-TFBGA BGA
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