The IS45S32400F-6BLA2 is a 128Mb synchronous DRAM memory chip from Quarktwin Technology Ltd., designed for high-speed data transfer with a clock frequency of 166 MHz. It operates on a single power supply of 3.3V ¬± 0.3V and features a fully synchronous interface, meaning all signals are referenced to the positive edge of the clock. The memory is organized as 4 banks of 1M x 32 bits, allowing for efficient data access and management. This memory chip supports programmable burst lengths of 1, 2, 4, 8, or full page, with options for sequential or interleaved burst sequences. It includes auto-refresh and self-refresh modes, with a refresh cycle of 4096 every 16ms for A2 grade or 64ms for commercial and industrial grades. The device is compatible with LVTTL signaling and offers programmable CAS latency options of 2 or 3 clocks. The IS45S32400F-6BLA2 is available in a 90-ball TF-BGA package and is suitable for automotive applications with an operating temperature range of -40¬8C to +105¬8C. This product is ideal for engineers seeking reliable and high-performance memory solutions for various applications.
SDRAM Memory IC 128Mb (4M x 32) Parallel 166MHz 5.4ns 90-TFBGA (8x13)
Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 4Mx32, 166MHz, 90 ball BGA (8Mm x 13mm) RoHS
IC DRAM 128MBIT PARALLEL 90TFBGA
SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-TFBGA (8x13)
IC DRAM 128MBIT PARALLEL 90TFBGA
| DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS45S32400F-6BLA2-ND | 18W6882 | IS45S32400F-6BLA2 | IS45S32400F-6BLA2 | IS45S32400F-6BLA2 |
| Product Name | Memory | Automotive (-40 To +105C), 128M, 3.3V, Sdram, 4Mx32, 166Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs Integrated Silicon Solution (Issi) | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | ||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | |
| Package Type | 90-TFBGA | BGA | BGA; 90-TFBGA |
