Win Source Part Number: 1167504-IS46LR32160B
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 240
Mounting: SMD (SMT)
Technology: SDRAM - Mobile LPDDR
Memory Type: Volatile
Memory Size: 512Mb (16M x 32)
Access Time: 5.5 ns
Voltage - Supply: 1.7V ~ 1.95V
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: DRAM
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): IS46LR32160B6BLA1;
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
Mfr: ISSI, Integrated Silicon Solution Inc
Base Product Number: IS46LR32160
IC DRAM 512MBIT PARALLEL 90TFBGA
IC DRAM 512MBIT PARALLEL 90TFBGA
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1167504-IS46LR32160B-6BLA1 | IS46LR32160B-6BLA1 | IS46LR32160B-6BLA1 | IS46LR32160B-6BLA1 |
| Product Name | Integrated Circuits (ICs) - Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5.5 ns | 5.5 ns | 5.5 ns | 5.5 ns |
| Cycle Time | 12 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
