IC DRAM 512MBIT PAR 90TFBGA Product overview: IS46LR32160B-6BLA1 from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS46LR32160B-6BL
Win Source Part Number: 1167504-IS46LR32160B
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 240
Mounting: SMD (SMT)
Technology: SDRAM - Mobile LPDDR
Memory Type: Volatile
Memory Size: 512Mb (16M x 32)
Access Time: 5.5 ns
Voltage - Supply: 1.7V ~ 1.95V
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: DRAM
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): IS46LR32160B6BLA1;
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
Mfr: ISSI, Integrated Silicon Solution Inc
Base Product Number: IS46LR32160
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 90TFBGA
IC DRAM 512MBIT PARALLEL 90TFBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS46LR32160B-6BLA1 | 1167504-IS46LR32160B-6BLA1 | IS46LR32160B-6BLA1 | IS46LR32160B-6BLA1 | IS46LR32160B-6BLA1 |
| Product Name | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 5.5 ns | 5.5 ns | 5.5 ns | 5.5 ns | 5.5 ns |
| Cycle Time | 12 ns | 12 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
