The IS46DR16320D-3DBLA1 is a 512Mb DDR2 SDRAM memory chip from Quarktwin Technology Ltd. It operates at a voltage of 1.8V ±0.1V and features a double data rate interface, allowing for two data transfers per clock cycle. The device supports a 4-bit prefetch architecture and includes four internal banks for concurrent operations. It offers programmable CAS latency options of 3, 4, 5, and 6, along with adjustable burst lengths of 4 or 8. This memory chip is available in an 84-ball WBGA package and is designed for high-speed applications, achieving a cycle time of 2.5ns at CL=5 for DDR2-800. It is suitable for commercial, industrial, and automotive temperature ranges, with operating temperatures from -40°C to 95°C for industrial and automotive applications. The IS46DR16320D-3DBLA1 also features on-die termination and adjustable data-output drive strength, making it versatile for various applications.
SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 333MHz 450ps 84-TWBGA (8x12.5)
Win Source Part Number: 1158287-IS46DR16320D
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 209
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 450 ps
Voltage - Supply: 1.7V ~ 1.9V
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: DRAM
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): IS46DR16320D3DBLA1;
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
Mfr: ISSI, Integrated Silicon Solution Inc
Base Product Number: IS46DR16320
Product Status: Not For New Designs
IC DRAM 512MBIT PAR 84TWBGA Product overview: IS46DR16320D-3DBLA1 from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS46DR16320D-3DB
IC DRAM 512MBIT PARALLEL 84TWBGA
SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 84-TWBGA (8x12.5)
IC DRAM 512MBIT PARALLEL 84TWBGA
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS46DR16320D-3DBLA1-ND | 1158287-IS46DR16320D-3DBLA1 | 774-IS46DR16320D-3DBLA1 | IS46DR16320D-3DBLA1 | IS46DR16320D-3DBLA1 | IS46DR16320D-3DBLA1 |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | |
| Package Type | 84-TFBGA | BGA | BGA; 84-TFBGA | |||
| Supply Voltage | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7 | 1.7V ~ 1.9V | 1.7V ~ 1.9V |
