IC DRAM 512MBIT PAR 66TSOP II Product overview: IS46R86400D-6TLA1 from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS46R86400D-6TLA
Alternative Parts (Cross-Reference): Cross
Manufacturer: ISSI, Integrated Silicon Solution Inc
Category: Integrated Circuits (ICs) Memory Memory
Package: Tray
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II
SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 166MHz 700ps 66-TSOP II
SDRAM - DDR Memory IC 512Mbit Parallel 166 MHz 700 ps 66-TSOP II
IC DRAM 512MBIT PAR 66TSOP II
IC DRAM 512MBIT PAR 66TSOP II
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS46R86400D-6TLA1 | IS46R86400D-6TLA1-ND | IS46R86400D-6TLA1 | IS46R86400D-6TLA1 | IS46R86400D-6TLA1 | |
| Product Name | Memory IC and Storage Component | Integrated Circuits (ICs) Memory Memory | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 0.7000 ns | 0.7000 ns | 0.7000 ns | 0.7000 ns | ||
| Cycle Time | 15 ns | |||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |
