Integrated Silicon Solution, Inc. Memory IS46DR16640B-25DBLA2

Description
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ps 84-TWBGA (8x12.5)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ps 84-TWBGA (8x12.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS46DR16640B-25DBLA2-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ps 84-TWBGA (8x12.5)

SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ps 84-TWBGA (8x12.5)

Buy Now Datasheet
Memory IC and Storage Component - 774-IS46DR16640B-25DBLA2 - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS46DR16640B-25DBLA2
Memory IC and Storage Component 774-IS46DR16640B-25DBLA2
IC DRAM 1GBIT PARALLEL 84TWBGA Product overview: IS46DR16640B-25DBLA2 from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS46DR16640B-25D BLA2 can be used for catalog matching and distributor lookup.

IC DRAM 1GBIT PARALLEL 84TWBGA Product overview: IS46DR16640B-25DBLA2 from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS46DR16640B-25DBLA2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 1024145-IS46DR16640B-25DBLA2 - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1024145-IS46DR16640B-25DBLA2
Integrated Circuits (ICs) - Memory 1024145-IS46DR16640B-25DBLA2
Win Source Part Number: 1024145-IS46DR16640B -25DBLA2 Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 209 Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 1Gb (64M x 16) Access Time: 400 ps Voltage - Supply: 1.7V ~ 1.9V Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5) Temperature Range - Operating: -40°C ~ 105°C (TA) Memory Format: DRAM Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 54 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0032 Mfr: ISSI, Integrated Silicon Solution Inc Base Product Number: IS46DR16640 Product Status: Not For New Designs

Win Source Part Number: 1024145-IS46DR16640B-25DBLA2
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 209
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 400 ps
Voltage - Supply: 1.7V ~ 1.9V
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)
Temperature Range - Operating: -40°C ~ 105°C (TA)
Memory Format: DRAM
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0032
Mfr: ISSI, Integrated Silicon Solution Inc
Base Product Number: IS46DR16640
Product Status: Not For New Designs

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 84TWBGA

IC DRAM 1GBIT PARALLEL 84TWBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS46DR16640B-25DBLA2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS46DR16640B-25DBLA2
Integrated Circuits (ICs) - Memory IS46DR16640B-25DBLA2
IC DRAM 1GBIT PARALLEL 84TWBGA

IC DRAM 1GBIT PARALLEL 84TWBGA

Supplier's Site
Automotive (Tc Integrated Silicon Solution (Issi) - 18W6890 - Newark, An Avnet Company
Chicago, IL, United States
Automotive (Tc Integrated Silicon Solution (Issi)
18W6890
Automotive (Tc Integrated Silicon Solution (Issi) 18W6890
Automotive (Tc: -40 to +105C),1G, 1.8V, DDR2, 64Mx16, 400Mhz @ CL5, 84 ball BGA (8Mm x 12.5mm) RoHS

Automotive (Tc: -40 to +105C),1G, 1.8V, DDR2, 64Mx16, 400Mhz @ CL5, 84 ball BGA (8Mm x 12.5mm) RoHS

Supplier's Site
Memory - IS46DR16640B-25DBLA2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-TWBGA (8x12.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-TWBGA (8x12.5)

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS46DR16640B-25DBLA2-ND 774-IS46DR16640B-25DBLA2 1024145-IS46DR16640B-25DBLA2 IS46DR16640B-25DBLA2 IS46DR16640B-25DBLA2 18W6890 IS46DR16640B-25DBLA2
Product Name Memory Memory IC and Storage Component Integrated Circuits (ICs) - Memory Memory Integrated Circuits (ICs) - Memory Automotive (Tc Integrated Silicon Solution (Issi) Memory
Memory Category DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 105 C (-40 to 221 F) -40 C (-40 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Package Type 84-TFBGA BGA BGA; 84-TFBGA
Supply Voltage 1.7V ~ 1.9V 1.7 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7V ~ 1.9V
Access Time 0.4000 ns 0.4000 ns 0.4000 ns 0.4000 ns 0.4000 ns
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