IC DRAM 128MBIT PAR 54TFBGA Product overview: IS45S16800F-7BLA2-TR
SDRAM Memory IC 128Mb (8M x 16) Parallel 143MHz 5.4ns 54-TFBGA (8x8)
Win Source Part Number: 1355126-IS45S16800F-
Category: Integrated Circuits (ICs) - Memory - Memory
Package: Tape & Reel
Temperature Range - Operating: -40°C ~ 105°C (TA)
Fake Threat In the Open Market: 33 pct.
MSL Level: 3 (168 Hours)
Mfr: ISSI, Integrated Silicon Solution Inc
Product Status: Active
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)
Base Product Number: IS45S16800
Technology: SDRAM
Mounting Type: Surface Mount
HTSUS: 8542.32.0002
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 3V ~ 3.6V
Memory Type: Volatile
Memory Format: DRAM
Memory Size: 128Mbit
Memory Organization: 8M x 16
Memory Interface: Parallel
Clock Frequency: 143 MHz
Access Time: 5.4 ns
IC DRAM 128MBIT PARALLEL 54TFBGA
IC DRAM 128MBIT PARALLEL 54TFBGA
SDRAM Memory IC 128Mbit Parallel 143 MHz 5.4 ns 54-TFBGA (8x8)
IC DRAM 128MBIT PARALLEL 54TFBGA
Automotive (-40 to +105C), 128M, 3.3V, SDRAM, 8Mx16, 143Mhz, 54 ball BGA (8Mm x 8mm) ROHS, T&R
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Quarktwin Technology Ltd. | Lingto Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS45S16800F-7BLA2-TR | IS45S16800F-7BLA2-TR-ND | 1355126-IS45S16800F-7BLA2-TR | IS45S16800F-7BLA2-TR | IS45S16800F-7BLA2-TR | IS45S16800F-7BLA2-TR | IS45S16800F-7BLA2-TR | 29X5340 |
| Product Name | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Integrated Circuits (ICs) - Memory | Memory | Memory | Memory | Automotive (-40 To +105C), 128M, 3.3V, Sdram, 8Mx16, 143Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs, T&r Integrated Silicon Solution (Issi) |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | SDRAM; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | ||
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | ||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | ||
| Number of Words | 2000 k |