Integrated Silicon Solution, Inc. Memory IS45S16800B-7TLA1-TR

Description
SDRAM Memory IC 128Mb (8M x 16) Parallel 143MHz 5.4ns 54-TSOP II
Request a Quote Datasheet
Description
SDRAM Memory IC 128Mb (8M x 16) Parallel 143MHz 5.4ns 54-TSOP II
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS45S16800B-7TLA1-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 128Mb (8M x 16) Parallel 143MHz 5.4ns 54-TSOP II

SDRAM Memory IC 128Mb (8M x 16) Parallel 143MHz 5.4ns 54-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS45S16800B-7TLA1-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS45S16800B-7TLA1-TR
Integrated Circuits (ICs) - Memory IS45S16800B-7TLA1-TR
IC DRAM 128MBIT PAR 54TSOP II

IC DRAM 128MBIT PAR 54TSOP II

Supplier's Site
Memory - IS45S16800B-7TLA1-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 143 MHz 5.4 ns 54-TSOP II

SDRAM Memory IC 128Mbit Parallel 143 MHz 5.4 ns 54-TSOP II

Buy Now Datasheet
IC DRAM 128MBIT PAR 54TSOP II

IC DRAM 128MBIT PAR 54TSOP II

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS45S16800B-7TLA1-TR-ND IS45S16800B-7TLA1-TR IS45S16800B-7TLA1-TR IS45S16800B-7TLA1-TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type TSOP; "54-TSOP (0.400"", 10.16mm Width)" 54-TSOP (0.400\", 10.16mm Width)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 0436A4ACLAA-4F - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.3 ns
Density 4000 kbits
View Details
Memory - MT4C1004J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
FIFOs Memory - MPD23698RHA - Quarktwin Technology Ltd.
View Details
2 suppliers