Integrated Silicon Solution, Inc. Memory IS46TR16256B-125KBLA2

Description
SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)
  • Memory - 706-IS46TR16256B-125KBLA2-ND - DigiKey
    DigiKey
  • Memory - DDR - IS46TR16256B-125KBLA2 - 940745-IS46TR16256B-125KBLA2 - Win Source Electronics
    Win Source Electronics
  • Memory IC and Storage Component - 774-IS46TR16256B-125KBLA2 - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Memory - IS46TR16256B-125KBLA2 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - IS46TR16256B-125KBLA2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Memory - IS46TR16256B-125KBLA2 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Integrated Circuits (ICs) - Memory - Memory - IS46TR16256B-125KBLA2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)
Request a Quote
Datasheet
Datasheet Summary
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The IS46TR16256B-125KBLA2 is a 4Gb DDR3 SDRAM memory chip from Quarktwin Technology Ltd., featuring a 256Mx16 configuration. It operates at a standard voltage of 1.5V and is backward compatible with 1.5V systems, while also supporting low voltage operation at 1.35V. The memory supports high-speed data transfer rates up to 1600 MT/s with a CAS latency of 11. It is designed for a wide range of operating temperatures, suitable for commercial, industrial, and automotive applications, with temperature ratings from -40°C to +105°C. The device includes features such as partial array self-refresh, dynamic on-die termination, and programmable burst lengths. It is packaged in a 96-ball BGA format, measuring 9mm x 13mm. This memory chip is ideal for applications requiring reliable performance in various environmental conditions.

Datasheet Summary
Powered by GS/AI

The IS46TR16256B-125KBLA2 is a 4Gb DDR3 SDRAM memory chip from Quarktwin Technology Ltd., featuring a 256Mx16 configuration. It operates at a standard voltage of 1.5V and is backward compatible with 1.5V systems, while also supporting low voltage operation at 1.35V. The memory supports high-speed data transfer rates up to 1600 MT/s with a CAS latency of 11. It is designed for a wide range of operating temperatures, suitable for commercial, industrial, and automotive applications, with temperature ratings from -40°C to +105°C. The device includes features such as partial array self-refresh, dynamic on-die termination, and programmable burst lengths. It is packaged in a 96-ball BGA format, measuring 9mm x 13mm. This memory chip is ideal for applications requiring reliable performance in various environmental conditions.

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-IS46TR16256B-125KBLA2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
706-IS46TR16256B-125KBLA2-ND
Memory 706-IS46TR16256B-125KBLA2-ND
SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)

SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)

Buy Now Datasheet
Memory - DDR - IS46TR16256B-125KBLA2 - 940745-IS46TR16256B-125KBLA2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - IS46TR16256B-125KBLA2
940745-IS46TR16256B-125KBLA2
Memory - DDR - IS46TR16256B-125KBLA2 940745-IS46TR16256B-125KBLA2
Win Source Part Number: 940745-IS46TR16256B- 125KBLA2 Series: * Categories: Memory

Win Source Part Number: 940745-IS46TR16256B-125KBLA2
Series: *
Categories: Memory

Buy Now
Memory IC and Storage Component - 774-IS46TR16256B-125KBLA2 - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-IS46TR16256B-125KBLA2
Memory IC and Storage Component 774-IS46TR16256B-125KBLA2
IC DRAM 4GBIT PARALLEL 96TWBGA Product overview: IS46TR16256B-125KBLA 2 from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS46TR16256B-125 KBLA2 can be used for catalog matching and distributor lookup.

IC DRAM 4GBIT PARALLEL 96TWBGA Product overview: IS46TR16256B-125KBLA2 from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS46TR16256B-125KBLA2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - IS46TR16256B-125KBLA2 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
IS46TR16256B-125KBLA2
Memory IS46TR16256B-125KBLA2
SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 96-TWBGA (9x13)

SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 96-TWBGA (9x13)

Buy Now Datasheet
Memory - IS46TR16256B-125KBLA2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
IS46TR16256B-125KBLA2
Memory IS46TR16256B-125KBLA2
IC DRAM 4GBIT PARALLEL 96TWBGA

IC DRAM 4GBIT PARALLEL 96TWBGA

Supplier's Site Datasheet
Memory - IS46TR16256B-125KBLA2 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
IS46TR16256B-125KBLA2
Memory IS46TR16256B-125KBLA2
IC DRAM 4GBIT PARALLEL 96TWBGA

IC DRAM 4GBIT PARALLEL 96TWBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS46TR16256B-125KBLA2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS46TR16256B-125KBLA2
Integrated Circuits (ICs) - Memory - Memory IS46TR16256B-125KBLA2
IC DRAM 4GBIT PARALLEL 96TWBGA

IC DRAM 4GBIT PARALLEL 96TWBGA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. ODG (Origin Data Global) Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 706-IS46TR16256B-125KBLA2-ND 940745-IS46TR16256B-125KBLA2 774-IS46TR16256B-125KBLA2 IS46TR16256B-125KBLA2 IS46TR16256B-125KBLA2 IS46TR16256B-125KBLA2 IS46TR16256B-125KBLA2
Product Name Memory Memory - DDR - IS46TR16256B-125KBLA2 Memory IC and Storage Component Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip DRAM Chip DRAM; DRAM Chip SDRAM - DDR3; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 105 C (-40 to 221 F) -40 C (-40 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Package Type 96-TFBGA BGA; 96-TFBGA 96-TFBGA BGA
Supply Voltage 1.425V ~ 1.575V 1.425 1.425V ~ 1.575V 1.425V ~ 1.575V -40degC ~ 105degC (TC)
Access Time 0.2250 ns 20 ns 20 ns 20 ns
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