The IS46TR16256B-125KBLA2 is a 4Gb DDR3 SDRAM memory chip from Quarktwin Technology Ltd., featuring a 256Mx16 configuration. It operates at a standard voltage of 1.5V and is backward compatible with 1.5V systems, while also supporting low voltage operation at 1.35V. The memory supports high-speed data transfer rates up to 1600 MT/s with a CAS latency of 11. It is designed for a wide range of operating temperatures, suitable for commercial, industrial, and automotive applications, with temperature ratings from -40¬8C to +105¬8C. The device includes features such as partial array self-refresh, dynamic on-die termination, and programmable burst lengths. It is packaged in a 96-ball BGA format, measuring 9mm x 13mm. This memory chip is ideal for applications requiring reliable performance in various environmental conditions.
IC DRAM 4GBIT PARALLEL 96TWBGA Product overview: IS46TR16256B-125KBLA
SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 800MHz 20ns 96-TWBGA (9x13)
IC DRAM 4GBIT PARALLEL 96TWBGA
Win Source Part Number: 940745-IS46TR16256B-
Series: *
Categories: Memory
IC DRAM 4GBIT PARALLEL 96TWBGA
IC DRAM 4GBIT PARALLEL 96TWBGA
SDRAM - DDR3 Memory IC 4Gbit Parallel 800 MHz 20 ns 96-TWBGA (9x13)
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS46TR16256B-125KBLA2 | 706-IS46TR16256B-125KBLA2-ND | IS46TR16256B-125KBLA2 | 940745-IS46TR16256B-125KBLA2 | IS46TR16256B-125KBLA2 | IS46TR16256B-125KBLA2 | IS46TR16256B-125KBLA2 |
| Product Name | Memory IC and Storage Component | Memory | Memory | Memory - DDR - IS46TR16256B-125KBLA2 | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | SDRAM - DDR3; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | |
| Access Time | 0.2250 ns | 20 ns | 20 ns | 20 ns | |||
| Operating Temperature | -40 C (-40 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | |||
| Density | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | ||
| Number of Words | 32000 k |
