Integrated Silicon Solution, Inc. Memory IS45S32400B-6TLA1-TR

Description
SDRAM Memory IC 128Mb (4M x 32) Parallel 166MHz 5.4ns 86-TSOP II
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Description
SDRAM Memory IC 128Mb (4M x 32) Parallel 166MHz 5.4ns 86-TSOP II
Request a Quote
Datasheet
Datasheet Summary
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The IS45S32400B-6TLA1-TR is a 128Mb Synchronous DRAM memory chip designed for high-speed data transfer with a pipeline architecture. It operates at clock frequencies of 100 MHz to 166 MHz and is organized as 1Meg x 32 bits across four banks, allowing for efficient data access and management. The device supports a 3.3V power supply and features a LVTTL interface. This memory chip includes programmable burst lengths of 1, 2, 4, 8, or full page, with options for sequential or interleaved burst sequences. It also supports auto-refresh and self-refresh modes, with a refresh cycle of 4096 every 64 ms. The IS45S32400B-6TLA1-TR is available in both 86-pin TSOP-II and 90-ball FBGA packages, and it is lead-free, making it suitable for various applications, including those requiring industrial temperature ranges. Engineers considering this product should note its capabilities for high-speed synchronous operation and flexible burst access, which can enhance performance in memory-intensive applications.

Datasheet Summary
Powered by GS/AI

The IS45S32400B-6TLA1-TR is a 128Mb Synchronous DRAM memory chip designed for high-speed data transfer with a pipeline architecture. It operates at clock frequencies of 100 MHz to 166 MHz and is organized as 1Meg x 32 bits across four banks, allowing for efficient data access and management. The device supports a 3.3V power supply and features a LVTTL interface. This memory chip includes programmable burst lengths of 1, 2, 4, 8, or full page, with options for sequential or interleaved burst sequences. It also supports auto-refresh and self-refresh modes, with a refresh cycle of 4096 every 64 ms. The IS45S32400B-6TLA1-TR is available in both 86-pin TSOP-II and 90-ball FBGA packages, and it is lead-free, making it suitable for various applications, including those requiring industrial temperature ranges. Engineers considering this product should note its capabilities for high-speed synchronous operation and flexible burst access, which can enhance performance in memory-intensive applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS45S32400B-6TLA1-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 128Mb (4M x 32) Parallel 166MHz 5.4ns 86-TSOP II

SDRAM Memory IC 128Mb (4M x 32) Parallel 166MHz 5.4ns 86-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS45S32400B-6TLA1-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS45S32400B-6TLA1-TR
Integrated Circuits (ICs) - Memory IS45S32400B-6TLA1-TR
IC DRAM 128MBIT PAR 86TSOP II

IC DRAM 128MBIT PAR 86TSOP II

Supplier's Site
IC DRAM 128MBIT PAR 86TSOP II

IC DRAM 128MBIT PAR 86TSOP II

Supplier's Site Datasheet
Memory - IS45S32400B-6TLA1-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 86-TSOP II

SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 86-TSOP II

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Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS45S32400B-6TLA1-TR-ND IS45S32400B-6TLA1-TR IS45S32400B-6TLA1-TR IS45S32400B-6TLA1-TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type "86-TFSOP (0.400"", 10.16mm Width)" 86-TFSOP (0.400\", 10.16mm Width)
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