Integrated Silicon Solution, Inc. Memory IS46R16160F-6BLA1

Description
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 166MHz 700ps 60-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 166MHz 700ps 60-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS46R16160F-6BLA1-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 166MHz 700ps 60-TFBGA (8x13)

SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 166MHz 700ps 60-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS46R16160F-6BLA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS46R16160F-6BLA1
Integrated Circuits (ICs) - Memory IS46R16160F-6BLA1
IC DRAM 256MBIT PARALLEL 60TFBGA

IC DRAM 256MBIT PARALLEL 60TFBGA

Supplier's Site
IC DRAM 256MBIT PARALLEL 60TFBGA

IC DRAM 256MBIT PARALLEL 60TFBGA

Supplier's Site Datasheet
Memory - IS46R16160F-6BLA1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 166 MHz 700 ps 60-TFBGA (8x13)

SDRAM - DDR Memory IC 256Mbit Parallel 166 MHz 700 ps 60-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS46R16160F-6BLA1-ND IS46R16160F-6BLA1 IS46R16160F-6BLA1 IS46R16160F-6BLA1
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 60-TFBGA BGA BGA; 60-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 9338PCQR - Quarktwin Technology Ltd.
Texas Instruments
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 16-DIP (0.300\", 7.62mm)
Supply Voltage 4.75V ~ 5.25V
View Details
Memory - 28C64A-20B/UC - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 200 ns
Density 64 kbits
View Details
Memory - 2346575 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers