Integrated Silicon Solution, Inc. Memory IS46DR81280B-3DBLA1

Description
IC DRAM 1GBIT PARALLEL 60TWBGA
Datasheet
Description
IC DRAM 1GBIT PARALLEL 60TWBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 1GBIT PARALLEL 60TWBGA

IC DRAM 1GBIT PARALLEL 60TWBGA

Supplier's Site Datasheet
Memory - IS46DR81280B-3DBLA1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-TWBGA (8x10.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS46DR81280B-3DBLA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS46DR81280B-3DBLA1
Integrated Circuits (ICs) - Memory IS46DR81280B-3DBLA1
IC DRAM 1GBIT PARALLEL 60TWBGA

IC DRAM 1GBIT PARALLEL 60TWBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS46DR81280B-3DBLA1 IS46DR81280B-3DBLA1 IS46DR81280B-3DBLA1
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.4500 ns 0.4500 ns 0.4500 ns
Density 1000000 kbits 1000000 kbits 1000000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882749P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type SOIC; SOIC
View Details
Memory - AS8ERLC128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory IC and Storage Component - 774-HYB18T1G160AF-5 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
View Details
Integrated Circuits (ICs) - Memory - Memory - NM27C020T200 - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category EPROM; Non-Volatile
Cycle Time 200 ns
Density 2000 kbits
View Details
2 suppliers