Integrated Silicon Solution, Inc. Memory IS46R16160D-5TLA1

Description
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP II
Request a Quote
Description
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP II
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IS46R16160D-5TLA1 is a 256Mb DDR SDRAM memory device from Quarktwin Technology Ltd. It operates at a voltage of 2.5V ¬± 0.2V and is compatible with SSTL_2 I/O standards. This memory features a double-data rate architecture, allowing two data transfers per clock cycle, and includes four internal banks for concurrent operations. The device supports programmable burst lengths of 2, 4, and 8, as well as various CAS latencies (2, 2.5, and 3). The IS46R16160D-5TLA1 is available in a 66-pin TSOP-II package and is suitable for automotive applications with a temperature range of -40¬8C to +85¬8C. It also supports Auto Refresh and Self Refresh modes, enhancing its operational efficiency. The maximum clock frequency is 200 MHz, making it suitable for high-speed data transfer applications. This product is designed for applications requiring reliable memory performance in automotive environments.

Datasheet Summary
Powered by GS/AI

The IS46R16160D-5TLA1 is a 256Mb DDR SDRAM memory device from Quarktwin Technology Ltd. It operates at a voltage of 2.5V ¬± 0.2V and is compatible with SSTL_2 I/O standards. This memory features a double-data rate architecture, allowing two data transfers per clock cycle, and includes four internal banks for concurrent operations. The device supports programmable burst lengths of 2, 4, and 8, as well as various CAS latencies (2, 2.5, and 3). The IS46R16160D-5TLA1 is available in a 66-pin TSOP-II package and is suitable for automotive applications with a temperature range of -40¬8C to +85¬8C. It also supports Auto Refresh and Self Refresh modes, enhancing its operational efficiency. The maximum clock frequency is 200 MHz, making it suitable for high-speed data transfer applications. This product is designed for applications requiring reliable memory performance in automotive environments.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS46R16160D-5TLA1-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP II

SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP II

Buy Now Datasheet
Memory - IS46R16160D-5TLA1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 66-TSOP II

SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 66-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS46R16160D-5TLA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS46R16160D-5TLA1
Integrated Circuits (ICs) - Memory IS46R16160D-5TLA1
IC DRAM 256MBIT PAR 66TSOP II

IC DRAM 256MBIT PAR 66TSOP II

Supplier's Site
Automotive (-40 To +85C), 256M, 2.5V, Ddr1, 64Mx8, 200Mhz, 66 Pin Tsop-Ii Rohs Integrated Silicon Solution (Issi) - 18W6908 - Newark, An Avnet Company
Chicago, IL, United States
Automotive (-40 To +85C), 256M, 2.5V, Ddr1, 64Mx8, 200Mhz, 66 Pin Tsop-Ii Rohs Integrated Silicon Solution (Issi)
18W6908
Automotive (-40 To +85C), 256M, 2.5V, Ddr1, 64Mx8, 200Mhz, 66 Pin Tsop-Ii Rohs Integrated Silicon Solution (Issi) 18W6908
Automotive (-40 to +85C), 256M, 2.5V, DDR1, 64Mx8, 200MHz, 66 pin TSOP-II RoHS

Automotive (-40 to +85C), 256M, 2.5V, DDR1, 64Mx8, 200MHz, 66 pin TSOP-II RoHS

Supplier's Site
IC DRAM 256MBIT PAR 66TSOP II

IC DRAM 256MBIT PAR 66TSOP II

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS46R16160D-5TLA1-ND IS46R16160D-5TLA1 IS46R16160D-5TLA1 18W6908 IS46R16160D-5TLA1
Product Name Memory Memory Integrated Circuits (ICs) - Memory Automotive (-40 To +85C), 256M, 2.5V, Ddr1, 64Mx8, 200Mhz, 66 Pin Tsop-Ii Rohs Integrated Silicon Solution (Issi) Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type TSSOP; "66-TSSOP (0.400"", 10.16mm Width)" SSOP; TSSOP; 66-TSSOP (0.400\", 10.16mm Width) SSOP; TSSOP
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 40060530 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882785P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details