Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory - Memory IS46LD32128C-18BPLA2-TR

Description
IC DRAM 4GBIT HSUL 12 168VFBGA
Datasheet
Description
IC DRAM 4GBIT HSUL 12 168VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - IS46LD32128C-18BPLA2-TR - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS46LD32128C-18BPLA2-TR
Integrated Circuits (ICs) - Memory - Memory IS46LD32128C-18BPLA2-TR
IC DRAM 4GBIT HSUL 12 168VFBGA

IC DRAM 4GBIT HSUL 12 168VFBGA

Supplier's Site
SDRAM - Mobile LPDDR2 Memory IC 4Gbit HSUL_12 533 MHz 5.5 ns 168-VFBGA (12x12)

SDRAM - Mobile LPDDR2 Memory IC 4Gbit HSUL_12 533 MHz 5.5 ns 168-VFBGA (12x12)

Buy Now Datasheet
IC DRAM

IC DRAM

Supplier's Site Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS46LD32128C-18BPLA2-TR IS46LD32128C-18BPLA2-TR IS46LD32128C-18BPLA2-TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 533 MHz
Cycle Time 15 ns
Density 4000000 kbits 4000000 kbits 4000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - Memory - Controllers - N82C08-10 - 886770-N82C08-10 - Win Source Electronics
Specs
Memory Category DRAM Chip
View Details
2 suppliers
Memory - HYB25L512160AC-7.5 REEL - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category DRAM; DRAM Chip
Access Time 6 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
Integrated Circuits (ICs) - Memory - Memory - 93Z451LMQB - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category PROM; Non-Volatile
Density 8 kbits
Supply Voltage -55degC ~ 125degC (TC)
View Details
2 suppliers
Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details