Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory IS46DR81280C-3DBLA2

Description
IC DRAM 1GBIT PARALLEL 60TWBGA
Datasheet
Description
IC DRAM 1GBIT PARALLEL 60TWBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - IS46DR81280C-3DBLA2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS46DR81280C-3DBLA2
Integrated Circuits (ICs) - Memory IS46DR81280C-3DBLA2
IC DRAM 1GBIT PARALLEL 60TWBGA

IC DRAM 1GBIT PARALLEL 60TWBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 60TWBGA

IC DRAM 1GBIT PARALLEL 60TWBGA

Supplier's Site Datasheet
Memory - IS46DR81280C-3DBLA2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-TWBGA (8x10.5)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS46DR81280C-3DBLA2 IS46DR81280C-3DBLA2 IS46DR81280C-3DBLA2
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 333 MHz
Access Time 0.4500 ns 0.4500 ns 0.4500 ns
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882676P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 4096000 kbits
View Details
Memory - AS4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 27S13A/BEA - Quarktwin Technology Ltd.
Rochester Electronics
Specs
Memory Category PROM; PROM
Access Time 40 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details