Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory IS46DR16640B-25EBLA1

Description
IC DRAM 1GBIT PARALLEL 84TWBGA
Datasheet
Description
IC DRAM 1GBIT PARALLEL 84TWBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - IS46DR16640B-25EBLA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS46DR16640B-25EBLA1
Integrated Circuits (ICs) - Memory IS46DR16640B-25EBLA1
IC DRAM 1GBIT PARALLEL 84TWBGA

IC DRAM 1GBIT PARALLEL 84TWBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 84TWBGA

IC DRAM 1GBIT PARALLEL 84TWBGA

Supplier's Site Datasheet
Memory - IS46DR16640B-25EBLA1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-TWBGA (8x12.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-TWBGA (8x12.5)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS46DR16640B-25EBLA1 IS46DR16640B-25EBLA1 IS46DR16640B-25EBLA1
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 400 MHz
Access Time 0.4000 ns 0.4000 ns 0.4000 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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