Integrated Silicon Solution, Inc. Memory IS46DR16640B-25EBLA1

Description
IC DRAM 1GBIT PARALLEL 84TWBGA
Datasheet
Description
IC DRAM 1GBIT PARALLEL 84TWBGA
Datasheet

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Description
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IC DRAM 1GBIT PARALLEL 84TWBGA

IC DRAM 1GBIT PARALLEL 84TWBGA

Supplier's Site Datasheet
Memory - IS46DR16640B-25EBLA1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-TWBGA (8x12.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-TWBGA (8x12.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS46DR16640B-25EBLA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS46DR16640B-25EBLA1
Integrated Circuits (ICs) - Memory IS46DR16640B-25EBLA1
IC DRAM 1GBIT PARALLEL 84TWBGA

IC DRAM 1GBIT PARALLEL 84TWBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS46DR16640B-25EBLA1 IS46DR16640B-25EBLA1 IS46DR16640B-25EBLA1
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.4000 ns 0.4000 ns 0.4000 ns
Density 1000000 kbits 1000000 kbits 1000000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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