IC DRAM 512MBIT PAR 54TSOP II
SDRAM Memory IC 512Mb (32M x 16) Parallel 143MHz 5.4ns 54-TSOP II
SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 54-TSOP II
IC DRAM 512MBIT PAR 54TSOP II
IC DRAM 512MBIT PAR 54TSOP II
Automotive (-40 to +105C), 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 pin TSOP II RoHS
| ODG (Origin Data Global) | DigiKey | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS45S16320D-7TLA2 | IS45S16320D-7TLA2-ND | IS45S16320D-7TLA2 | IS45S16320D-7TLA2 | IS45S16320D-7TLA2 | 29X5329 |
| Product Name | Memory | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory | Automotive (-40 To +105C), 512M, 3.3V, Sdram, 32Mx16, 143Mhz, 54 Pin Tsop Ii Rohs Integrated Silicon Solution (Issi) |
| Memory Category | SDRAM; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip |
| Data Rate | 143 MHz | 143 MHz | ||||
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | ||
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) |
