IC DRAM 512MBIT PAR 60TFBGA Product overview: IS46LR16320B-6BLA1 from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS46LR16320B-6BL
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 040838-IS46LR16320B-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SDRAM - Mobile DDR
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 5.5ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 60-TFBGA (8x10)
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: DRAM
Max Frequency: 166MHz
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
IC DRAM 512MBIT PARALLEL 60TFBGA
IC DRAM 512MBIT PARALLEL 60TFBGA
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 166 MHz 5.5 ns 60-TFBGA (8x10)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS46LR16320B-6BLA1 | 040838-IS46LR16320B-6BLA1 | IS46LR16320B-6BLA1 | IS46LR16320B-6BLA1 | IS46LR16320B-6BLA1 |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - IS46LR16320B-6BLA1 | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5.5 ns | 5.5 ns | 5.5 ns | 5.5 ns | 5.5 ns |
| Cycle Time | 12 ns | ||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
