Infineon Technologies AG IGBT Modules FD600R06ME3_S2

The FD600R06ME3_S2 is an EconoDUAL™3 module with Trench/Fieldstop IGBT3 and Emitter Controlled diode, designed for chopper applications. It is housed in a standard package with a maximum collector-emitter voltage of 600 V, a continuous collector current of 600 A at 80°C case temperature, and a peak collector current of 1200 A. The module supports a maximum junction temperature of 150°C and has a total power dissipation of 2250 W. The IGBT gate-emitter voltage rating is ±20 V, with a gate charge of 9.60 µC and internal gate resistance of 0.33 Ω. The diode features a repetitive reverse voltage of 600 V, a forward current of 600 A, and a reverse recovery energy of 37.05 mJ. Thermal resistance from junction to case is 0.08 K/W for the diode and 0.04 K/W for the IGBT. The module is UL-approved (E83335).