Infineon Technologies AG IGBT Modules FF1200R17IP5

Description
PrimePACK™2 1700 V, 1200 A dual IGBT module with TRENCHSTOP™ IGBT5 and .XT interconnection technology, Emitter Controlled 5 diode and NTC. Summary of Features Extended operating temperature (T vjop = 175°C) Output current increased by more than 25% in the same footprint Copper Bonds for high current carrying capabilities Sintering of chips for highest power cycling capabilities Total losses reduced by up to 20% Package with CTI > 400 Benefits Increase in Power Density by up to 25% Up to 10 times longer lifetime Less cooling effort for same output power Enables higher system overload conditions Applications Energy Storage Systems General purpose motor drive - variating frequency and voltage Hydrogen electrolysis Motor Control Power transmission and distribution
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Description
PrimePACK™2 1700 V, 1200 A dual IGBT module with TRENCHSTOP™ IGBT5 and .XT interconnection technology, Emitter Controlled 5 diode and NTC. Summary of Features Extended operating temperature (T vjop = 175°C) Output current increased by more than 25% in the same footprint Copper Bonds for high current carrying capabilities Sintering of chips for highest power cycling capabilities Total losses reduced by up to 20% Package with CTI > 400 Benefits Increase in Power Density by up to 25% Up to 10 times longer lifetime Less cooling effort for same output power Enables higher system overload conditions Applications Energy Storage Systems General purpose motor drive - variating frequency and voltage Hydrogen electrolysis Motor Control Power transmission and distribution
Request a Quote
Datasheet
Datasheet Summary
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FF1200R17IP5 is a PrimePACK™2 module with Trench/Fieldstop IGBT5 and Emitter Controlled 5 diode, designed for high-power converter, motor drive, traction, and wind turbine applications. It has a collector-emitter voltage rating of 1700 V, a continuous collector current of 1200 A at 85 °C case temperature, and a peak collector current of 2400 A. The module operates with a maximum junction temperature of 175 °C, features a package with CTI > 400, and includes an NTC thermistor for temperature monitoring. The internal gate resistor is 1.2 Ω, and the input capacitance is 68.0 nF at 1000 kHz. The thermal resistance from junction to case is 0.196 K/W for the IGBT and 0.229 K/W for the diode.

Datasheet Summary
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FF1200R17IP5 is a PrimePACK™2 module with Trench/Fieldstop IGBT5 and Emitter Controlled 5 diode, designed for high-power converter, motor drive, traction, and wind turbine applications. It has a collector-emitter voltage rating of 1700 V, a continuous collector current of 1200 A at 85 °C case temperature, and a peak collector current of 2400 A. The module operates with a maximum junction temperature of 175 °C, features a package with CTI > 400, and includes an NTC thermistor for temperature monitoring. The internal gate resistor is 1.2 Ω, and the input capacitance is 68.0 nF at 1000 kHz. The thermal resistance from junction to case is 0.196 K/W for the IGBT and 0.229 K/W for the diode.

Suppliers

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Product
Description
Supplier Links
IGBT Modules - FF1200R17IP5 - Infineon Technologies AG
Neubiberg, Germany
IGBT Modules
FF1200R17IP5
IGBT Modules FF1200R17IP5
PrimePACK™2 1700 V, 1200 A dual IGBT module with TRENCHSTOP™ IGBT5 and .XT interconnection technology, Emitter Controlled 5 diode and NTC. Summary of Features Extended operating temperature (T vjop = 175°C) Output current increased by more than 25% in the same footprint Copper Bonds for high current carrying capabilities Sintering of chips for highest power cycling capabilities Total losses reduced by up to 20% Package with CTI > 400 Benefits Increase in Power Density by up to 25% Up to 10 times longer lifetime Less cooling effort for same output power Enables higher system overload conditions Applications Energy Storage Systems General purpose motor drive - variating frequency and voltage Hydrogen electrolysis Motor Control Power transmission and distribution

PrimePACK™2 1700 V, 1200 A dual IGBT module with TRENCHSTOP™ IGBT5 and .XT interconnection technology, Emitter Controlled 5 diode and NTC.


Summary of Features

  • Extended operating temperature (T vjop = 175°C)
  • Output current increased by more than 25% in the same footprint
  • Copper Bonds for high current carrying capabilities
  • Sintering of chips for highest power cycling capabilities
  • Total losses reduced by up to 20%
  • Package with CTI > 400

Benefits

  • Increase in Power Density by up to 25%
  • Up to 10 times longer lifetime
  • Less cooling effort for same output power
  • Enables higher system overload conditions

Applications

  • Energy Storage Systems
  • General purpose motor drive - variating frequency and voltage
  • Hydrogen electrolysis
  • Motor Control
  • Power transmission and distribution
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FF1200R17IP5
Product Name IGBT Modules
VCES 1700 volts
VCE(on) 1.75 volts
IC(max) 1200 amps
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