Infineon Technologies AG IGBT Modules FD400R33KF2C-K

Description
IGBT Modules N-CH 3.3KV 660A
Description
IGBT Modules N-CH 3.3KV 660A
Datasheet
Datasheet Summary
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The FD400R33KF2C-K is an IGBT module for brake-chopper applications, integrating an IGBT and a reverse diode in a module package with an AlSiC baseplate and AlN insulation. It supports a 3300 V collector-emitter voltage and 400 A continuous collector current. The IGBT has a total power dissipation of 4.8 kW at TC=25°C and an internal gate resistor of 1.3 Ω. The reverse diode supports 800 A peak repetitive forward current. Junction-to-case thermal resistance is 12.0 K/kW for the IGBT and 24.0 K/kW for the diode. The module passes a 6.0 kV RMS isolation test per IEC 601287-1 and IEC 60664-1. Mounting torque for M6 screws is 4.25-5.75 Nm. It complies with RoHS.

Datasheet Summary
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The FD400R33KF2C-K is an IGBT module for brake-chopper applications, integrating an IGBT and a reverse diode in a module package with an AlSiC baseplate and AlN insulation. It supports a 3300 V collector-emitter voltage and 400 A continuous collector current. The IGBT has a total power dissipation of 4.8 kW at TC=25°C and an internal gate resistor of 1.3 Ω. The reverse diode supports 800 A peak repetitive forward current. Junction-to-case thermal resistance is 12.0 K/kW for the IGBT and 24.0 K/kW for the diode. The module passes a 6.0 kV RMS isolation test per IEC 601287-1 and IEC 60664-1. Mounting torque for M6 screws is 4.25-5.75 Nm. It complies with RoHS.

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Sheung Wan, Hong Kong
IGBT Modules
FD400R33KF2C-K
IGBT Modules FD400R33KF2C-K
IGBT Modules N-CH 3.3KV 660A

IGBT Modules N-CH 3.3KV 660A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FD400R33KF2C-K
Product Name IGBT Modules
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