Infineon Technologies AG IGBT Modules FD800R17KE3_B2

Description
IGBT Modules N-CH 1.7KV 1.2KA
Description
IGBT Modules N-CH 1.7KV 1.2KA
Datasheet
Datasheet Summary
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The FD800R17KE3_B2 is an IGBT module containing a 1700 V IGBT and two 800 A anti-parallel diodes, designed for brake-chopper applications. It is packaged in a module with a baseplate made of AlSiC and internal isolation using AlN. The module measures 115.0 mm creepage and 100.0 mm clearance between terminals and the heatsink, with a weight of 1050 g. It has a maximum collector current of 800 A, peak gate-emitter voltage of ±20 V, and total power dissipation of 5.2 kW. Junction-to-case thermal resistance is 42.0 K/kW for the diodes and 1.64 K/kW for the IGBT. The module meets IEC 60286-3 and IEC 61224 standards for insulation. Mounting torque for screws is specified as 4.25-5.75 Nm for module mounting and 18.80-21.01 Nm for terminal connections.

Datasheet Summary
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The FD800R17KE3_B2 is an IGBT module containing a 1700 V IGBT and two 800 A anti-parallel diodes, designed for brake-chopper applications. It is packaged in a module with a baseplate made of AlSiC and internal isolation using AlN. The module measures 115.0 mm creepage and 100.0 mm clearance between terminals and the heatsink, with a weight of 1050 g. It has a maximum collector current of 800 A, peak gate-emitter voltage of ±20 V, and total power dissipation of 5.2 kW. Junction-to-case thermal resistance is 42.0 K/kW for the diodes and 1.64 K/kW for the IGBT. The module meets IEC 60286-3 and IEC 61224 standards for insulation. Mounting torque for screws is specified as 4.25-5.75 Nm for module mounting and 18.80-21.01 Nm for terminal connections.

Suppliers

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Product
Description
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Sheung Wan, Hong Kong
IGBT Modules
FD800R17KE3_B2
IGBT Modules FD800R17KE3_B2
IGBT Modules N-CH 1.7KV 1.2KA

IGBT Modules N-CH 1.7KV 1.2KA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FD800R17KE3_B2
Product Name IGBT Modules
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