Infineon Technologies AG Transistors FD150R12RT4

Description
IGBT Modules IGBT 1200V 150A
Description
IGBT Modules IGBT 1200V 150A
Datasheet
Datasheet Summary
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The FD150R12RT4 is a 34mm IGBT module with a fast Trench/Fieldstop IGBT4 and emitter-controlled diode, designed for high-frequency switching applications such as motor drives and UPS systems. It has a collector-emitter voltage rating of 1200V, a continuous collector current of 150A, and a peak collector current of 300A. The module supports an extended junction operating temperature of 150°C and features a positive temperature coefficient for VCEsat. It is packaged in a standard housing with an isolated baseplate and meets the IEC 60114-1 and IEC 61373 standards for electrical insulation and mechanical shock. The device has a maximum power dissipation of 790W, an isolated voltage rating of 4.0kV RMS, and weighs 160g.

Datasheet Summary
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The FD150R12RT4 is a 34mm IGBT module with a fast Trench/Fieldstop IGBT4 and emitter-controlled diode, designed for high-frequency switching applications such as motor drives and UPS systems. It has a collector-emitter voltage rating of 1200V, a continuous collector current of 150A, and a peak collector current of 300A. The module supports an extended junction operating temperature of 150°C and features a positive temperature coefficient for VCEsat. It is packaged in a standard housing with an isolated baseplate and meets the IEC 60114-1 and IEC 61373 standards for electrical insulation and mechanical shock. The device has a maximum power dissipation of 790W, an isolated voltage rating of 4.0kV RMS, and weighs 160g.

Suppliers

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Product
Description
Supplier Links
Transistors - FD150R12RT4 - ODG (Origin Data Global)
Shenzhen, China
Transistors
FD150R12RT4
Transistors FD150R12RT4
IGBT Modules IGBT 1200V 150A

IGBT Modules IGBT 1200V 150A

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FD150R12RT4
Product Name Transistors
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