IGBT MOD 600V 100A 275W Product overview: F475R06W1E3BOMA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 100A, 275W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 600V, 100A, 275W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-F475R06W1E3BOMA1
IGBT Module Trench Field Stop Three Phase Inverter 600V 100A 275W Chassis Mount Module
Manufacturer: Infineon Technologies
Win Source Part Number: 871404-F475R06W1E3BO
Operating Temperature Range: -40°C ~ 150°C
Features: IGBT Module Trench Field Stop Three Phase Inverter 600 V 100 A 275 W Chassis Mount Module
Package: Module
Package: Bulk
Mounting: Chassis Mount
Family Name: F475R06
Categories: Discrete Semiconductor Products
Case / Package: Module
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Limited
Quantity per package: 24
MSL Level: Not Applicable
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: F4-75R06W1E3, F4-75R06W1E3-ND, SP000257413
IGBT MOD 600V 100A 275W
IGBT MOD 600V 100A 275W
IGBT MOD, N-CH, 600V, 100A/150DEG C/275W; Continuous Collector Current:100A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:275W; Operating Temperature Max:150°C; IGBT Termination:Press Fit RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 297-F475R06W1E3BOMA1 | 448-F475R06W1E3BOMA1-ND | 871404-F475R06W1E3BOMA1 | F475R06W1E3BOMA1 | F475R06W1E3BOMA1 | 13AC8781 |
| Product Name | 600V 100A 275W IGBT Transistor | IGBT Modules | IGBTs - Modules - F475R06W1E3BOMA1 | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Modules | Igbt Mod, N-Ch, 600V, 100A/150Deg C/275W; Continuous Collector Current Infineon |
| PD | 275 milliwatts | 275000 milliwatts | ||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | ? to 150 C (? to 302 F) | ||
| Package Type | Tray | Module | SOT3; Module | Module | TO-3 |
