Infineon Technologies AG IGBT Modules FF1800R17IP5

Description
PrimePACK™3+ 1700 V, 1800 A dual IGBT module with TRENCHSTOP™ IGBT5 and .XT soft switching interconnection technology, Emitter Controlled 5 diode and NTC. Also available with pre-applied Thermal Interface Material. Summary of Features Extended operation temperature (Tvjop= 175°C) Output current increased by more than 25% in the same footprint Copper bonds for high current carrying capabilities Sintering of chips for highest power cycling capabilities Total losses reduced by u�p to 20% Package with CTI > 400 Benefits Increase in Power Density by up to 25% Up to 10 times longer lifetime Less cooling effort for same output p�ower Enables higher system overload conditions Applications Central inverter solutions Motor Control Power transmission and distribution Traction Wind Designers who used this product also designed with BSZ900N15NS3 G | N-Channel Power MOSFET DD350N16K | Thyristor / Diode Modules BSZ900N15NS3 G | N-Channel Power MOSFET DD350N16K | Thyristor / Diode Modules BSZ900N15NS3 G | N-Channel Power MOSFET DD350N16K | Thyristor / Diode Modules
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Description
PrimePACK™3+ 1700 V, 1800 A dual IGBT module with TRENCHSTOP™ IGBT5 and .XT soft switching interconnection technology, Emitter Controlled 5 diode and NTC. Also available with pre-applied Thermal Interface Material. Summary of Features Extended operation temperature (Tvjop= 175°C) Output current increased by more than 25% in the same footprint Copper bonds for high current carrying capabilities Sintering of chips for highest power cycling capabilities Total losses reduced by u�p to 20% Package with CTI > 400 Benefits Increase in Power Density by up to 25% Up to 10 times longer lifetime Less cooling effort for same output p�ower Enables higher system overload conditions Applications Central inverter solutions Motor Control Power transmission and distribution Traction Wind Designers who used this product also designed with BSZ900N15NS3 G | N-Channel Power MOSFET DD350N16K | Thyristor / Diode Modules BSZ900N15NS3 G | N-Channel Power MOSFET DD350N16K | Thyristor / Diode Modules BSZ900N15NS3 G | N-Channel Power MOSFET DD350N16K | Thyristor / Diode Modules
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Datasheet
Datasheet Summary
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FF1800R17IP5 is a PrimePACK™3+ B-series IGBT module with Trench/Fieldstop IGBT5 and Emitter Controlled 5 diode, designed for inverter applications. It is rated for a collector-emitter voltage of 1700 V, a continuous collector current of 1800 A at 85°C, and a peak collector current of 3600 A. The module operates with a maximum junction temperature of 175°C and includes an NTC thermistor for temperature sensing. The package is mounted on a copper baseplate with a thermal resistance from junction to case of 0.09 K/W for the IGBT and 0.10 K/W for the diode. The module measures 117 mm by 111 mm, with terminal connections for M4 and M8 screws, and is rated for an insulation test voltage of 4.0 kV RMS. It meets the CTI requirement of greater than 400, and weighs 1400 g.

Datasheet Summary
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FF1800R17IP5 is a PrimePACK™3+ B-series IGBT module with Trench/Fieldstop IGBT5 and Emitter Controlled 5 diode, designed for inverter applications. It is rated for a collector-emitter voltage of 1700 V, a continuous collector current of 1800 A at 85°C, and a peak collector current of 3600 A. The module operates with a maximum junction temperature of 175°C and includes an NTC thermistor for temperature sensing. The package is mounted on a copper baseplate with a thermal resistance from junction to case of 0.09 K/W for the IGBT and 0.10 K/W for the diode. The module measures 117 mm by 111 mm, with terminal connections for M4 and M8 screws, and is rated for an insulation test voltage of 4.0 kV RMS. It meets the CTI requirement of greater than 400, and weighs 1400 g.

Suppliers

Company
Product
Description
Supplier Links
IGBT Modules - FF1800R17IP5 - Infineon Technologies AG
Neubiberg, Germany
IGBT Modules
FF1800R17IP5
IGBT Modules FF1800R17IP5
PrimePACK™3+ 1700 V, 1800 A dual IGBT module with TRENCHSTOP™ IGBT5 and .XT soft switching interconnection technology, Emitter Controlled 5 diode and NTC. Also available with pre-applied Thermal Interface Material. Summary of Features Extended operation temperature (Tvjop= 175°C) Output current increased by more than 25% in the same footprint Copper bonds for high current carrying capabilities Sintering of chips for highest power cycling capabilities Total losses reduced by u�p to 20% Package with CTI > 400 Benefits Increase in Power Density by up to 25% Up to 10 times longer lifetime Less cooling effort for same output p�ower Enables higher system overload conditions Applications Central inverter solutions Motor Control Power transmission and distribution Traction Wind Designers who used this product also designed with BSZ900N15NS3 G | N-Channel Power MOSFET DD350N16K | Thyristor / Diode Modules BSZ900N15NS3 G | N-Channel Power MOSFET DD350N16K | Thyristor / Diode Modules BSZ900N15NS3 G | N-Channel Power MOSFET DD350N16K | Thyristor / Diode Modules

PrimePACK™3+ 1700 V, 1800 A dual IGBT module with TRENCHSTOP™ IGBT5 and .XT soft switching interconnection technology, Emitter Controlled 5 diode and NTC. Also available with pre-applied Thermal Interface Material.


Summary of Features

  • Extended operation temperature (Tvjop= 175°C)
  • Output current increased by more than 25% in the same footprint
  • Copper bonds for high current carrying capabilities
  • Sintering of chips for highest power cycling capabilities
  • Total losses reduced by u�p to 20%
  • Package with CTI > 400

Benefits

  • Increase in Power Density by up to 25%
  • Up to 10 times longer lifetime
  • Less cooling effort for same output p�ower
  • Enables higher system overload conditions

Applications

  • Central inverter solutions
  • Motor Control
  • Power transmission and distribution
  • Traction
  • Wind

Designers who used this product also designed with


  • BSZ900N15NS3 G |
    N-Channel Power MOSFET
  • DD350N16K |
    Thyristor / Diode Modules
  • BSZ900N15NS3 G |
    N-Channel Power MOSFET
  • DD350N16K |
    Thyristor / Diode Modules
  • BSZ900N15NS3 G |
    N-Channel Power MOSFET
  • DD350N16K |
    Thyristor / Diode Modules
Supplier's Site Datasheet
Transistors - FF1800R17IP5 - ODG (Origin Data Global)
Shenzhen, China
Transistors
FF1800R17IP5
Transistors FF1800R17IP5
IGBT Modules PP IHM I XHP 1 7KV

IGBT Modules PP IHM I XHP 1 7KV

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Modules
FF1800R17IP5
IGBT Modules FF1800R17IP5
IGBT Modules

IGBT Modules

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number FF1800R17IP5 FF1800R17IP5 FF1800R17IP5
Product Name IGBT Modules Transistors IGBT Modules
VCES 1700 volts
VCE(on) 1.75 volts
IC(max) 1800 amps
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