Infineon Technologies AG 1.2KV 200A IGBT Transistor FF150R12ME3G

IGBT Modules N-CH 1.2KV 200A Product overview: FF150R12ME3G from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2KV, 200A. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1.2KV, 200A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-FF150R12ME3G can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1324962-FF150R12ME3G
Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules
Packaging: Bulk
Standard Package: 1
Mounting: Chassis Mount
Power - Max: 695 W
Configuration: Half Bridge
Input: Standard
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
Temperature Range - Operating: -40°C ~ 125°C (TJ)
Case / Package: Module
ECCN: EAR99
Fake Threat In the Open Market: 70
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 0000.00.0000
Other Part Number: 2156-FF150R12ME3G,INFINFFF150R12ME3G
RoHS Status: ROHS3 Compliant