Infineon Technologies AG IGBT Modules FD800R45KL3-K_B5

Description
4500V IHV, 800 A 190mm chopper IGBT Module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and isolated AlSiC Base Plate - The best solution for your traction and industry applications Summary of Features High DC Stability High Short Circuit Capability, Self Limiting Short Circuit Current High Dynamic Robustness Low VCEsat with positive temperature coefficient 10.2 kV AC Isolation High Creepage and Clearance Distances Benefits High power density for compact inverter designs Standardized housing Applications Motor Control Traction
Request a Quote Datasheet
Description
4500V IHV, 800 A 190mm chopper IGBT Module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and isolated AlSiC Base Plate - The best solution for your traction and industry applications Summary of Features High DC Stability High Short Circuit Capability, Self Limiting Short Circuit Current High Dynamic Robustness Low VCEsat with positive temperature coefficient 10.2 kV AC Isolation High Creepage and Clearance Distances Benefits High power density for compact inverter designs Standardized housing Applications Motor Control Traction
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Modules - FD800R45KL3-K_B5 - Infineon Technologies AG
Neubiberg, Germany
IGBT Modules
FD800R45KL3-K_B5
IGBT Modules FD800R45KL3-K_B5
4500V IHV, 800 A 190mm chopper IGBT Module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and isolated AlSiC Base Plate - The best solution for your traction and industry applications Summary of Features High DC Stability High Short Circuit Capability, Self Limiting Short Circuit Current High Dynamic Robustness Low VCEsat with positive temperature coefficient 10.2 kV AC Isolation High Creepage and Clearance Distances Benefits High power density for compact inverter designs Standardized housing Applications Motor Control Traction

4500V IHV, 800 A 190mm chopper IGBT Module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and isolated AlSiC Base Plate - The best solution for your traction and industry applications


Summary of Features

  • High DC Stability
  • High Short Circuit Capability, Self Limiting Short Circuit Current
  • High Dynamic Robustness
  • Low VCEsat with positive temperature coefficient
  • 10.2 kV AC Isolation
  • High Creepage and Clearance Distances

Benefits

  • High power density for compact inverter designs
  • Standardized housing

Applications

  • Motor Control
  • Traction
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FD800R45KL3-K_B5
Product Name IGBT Modules
VCES 4500 volts
VCE(on) 2.5 volts
IC(max) 1200 amps
Unlock Full Specs
to access all available technical data

Similar Products

 - BSM50GP120BOSA1 - Rochester Electronics
Infineon Technologies AG
Specs
Package Type AG-ECONO3-3
Packing Method Tray
View Details
3 suppliers
IGBTs - Modules - BSM150GB60DLC - 1154767-BSM150GB60DLC - Win Source Electronics
Specs
Package Type SOT3
View Details
3 suppliers
 - AIGW50N65H5XKSA1 - Rochester Electronics
Infineon Technologies AG
Specs
Package Type PG-TO247-3
Packing Method Tube; Tube
View Details
5 suppliers
Single IGBTs - AUIRGU4045D-ND - DigiKey
Infineon Technologies AG
Specs
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-251-3 Short Leads, IPAK, TO-251AA
Packing Method Tube
View Details
2 suppliers