Infineon Technologies AG IGBT Modules FF200R12KE4

Description
62 mm 1200 V, 200 A dual IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Also available with Thermal Interface Material. Summary of Features Superior solution for frequency controlled inverter drives UL/CSA Certification with UL1557 E83336 Operating temperature up to 150 °C Optimized switching characteristic like softness and reduced switching losses Existing packages with higher current capability RoHS compliant Benefits Flexibility Optimal electrical performance Highest reliability Applications EV charging General purpose motor drive - variating frequency and voltage Motor Control Uninterruptible power supplies (UPS) Designers who used this product also designed with IDM02G120C5 | CoolSiC™ Schottky Diodes BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET IDM02G120C5 | CoolSiC™ Schottky Diodes BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET IDM02G120C5 | CoolSiC™ Schottky Diodes BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET
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Description
62 mm 1200 V, 200 A dual IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Also available with Thermal Interface Material. Summary of Features Superior solution for frequency controlled inverter drives UL/CSA Certification with UL1557 E83336 Operating temperature up to 150 °C Optimized switching characteristic like softness and reduced switching losses Existing packages with higher current capability RoHS compliant Benefits Flexibility Optimal electrical performance Highest reliability Applications EV charging General purpose motor drive - variating frequency and voltage Motor Control Uninterruptible power supplies (UPS) Designers who used this product also designed with IDM02G120C5 | CoolSiC™ Schottky Diodes BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET IDM02G120C5 | CoolSiC™ Schottky Diodes BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET IDM02G120C5 | CoolSiC™ Schottky Diodes BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Modules - FF200R12KE4 - Infineon Technologies AG
Neubiberg, Germany
IGBT Modules
FF200R12KE4
IGBT Modules FF200R12KE4
62 mm 1200 V, 200 A dual IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Also available with Thermal Interface Material. Summary of Features Superior solution for frequency controlled inverter drives UL/CSA Certification with UL1557 E83336 Operating temperature up to 150 °C Optimized switching characteristic like softness and reduced switching losses Existing packages with higher current capability RoHS compliant Benefits Flexibility Optimal electrical performance Highest reliability Applications EV charging General purpose motor drive - variating frequency and voltage Motor Control Uninterruptible power supplies (UPS) Designers who used this product also designed with IDM02G120C5 | CoolSiC™ Schottky Diodes BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET IDM02G120C5 | CoolSiC™ Schottky Diodes BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET IDM02G120C5 | CoolSiC™ Schottky Diodes BSZ099N06LS5 | N-Channel Power MOSFET IMBG120R234M2H | Silicon Carbide MOSFET Discretes IRLML9301 | P-Channel Power MOSFET

62 mm 1200 V, 200 A dual IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Also available with Thermal Interface Material.


Summary of Features

  • Superior solution for frequency controlled inverter drives
  • UL/CSA Certification with UL1557 E83336
  • Operating temperature up to 150 °C
  • Optimized switching characteristic like softness and reduced switching losses
  • Existing packages with higher current capability
  • RoHS compliant

Benefits

  • Flexibility
  • Optimal electrical performance
  • Highest reliability

Applications

  • EV charging
  • General purpose motor drive - variating frequency and voltage
  • Motor Control
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IDM02G120C5 |
    CoolSiC™ Schottky Diodes
  • BSZ099N06LS5 |
    N-Channel Power MOSFET
  • IMBG120R234M2H |
    Silicon Carbide MOSFET Discretes
  • IRLML9301 |
    P-Channel Power MOSFET
  • IDM02G120C5 |
    CoolSiC™ Schottky Diodes
  • BSZ099N06LS5 |
    N-Channel Power MOSFET
  • IMBG120R234M2H |
    Silicon Carbide MOSFET Discretes
  • IRLML9301 |
    P-Channel Power MOSFET
  • IDM02G120C5 |
    CoolSiC™ Schottky Diodes
  • BSZ099N06LS5 |
    N-Channel Power MOSFET
  • IMBG120R234M2H |
    Silicon Carbide MOSFET Discretes
  • IRLML9301 |
    P-Channel Power MOSFET
Supplier's Site Datasheet
IGBT Transistor 297-FF200R12KE4
IGBT Modules IGBT-MODULE Product overview: FF200R12KE4 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-FF200R12KE4 can be used for catalog matching and distributor lookup.

IGBT Modules IGBT-MODULE Product overview: FF200R12KE4 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-FF200R12KE4 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBT - 99579697 - Radwell International
Willingboro, NJ, United States
INSULATED GATE BIPOLAR TRANSISTOR, 240A I(C), 1200V V(BR)CES, N-CHANNEL. FREE 2 YEAR RADWELL WARRANTY

INSULATED GATE BIPOLAR TRANSISTOR, 240A I(C), 1200V V(BR)CES, N-CHANNEL. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
IGBT Modules
FF200R12KE4
IGBT Modules FF200R12KE4
IGBT Modules IGBT-MODULE

IGBT Modules IGBT-MODULE

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Radwell International VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FF200R12KE4 297-FF200R12KE4 99579697 FF200R12KE4
Product Name IGBT Modules IGBT Transistor IGBT IGBT Modules
VCE(on) 1.75 volts
IC(max) 200 amps
Package Type AG-62MMHB Tray
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