The IGC025S08S1 is an 80 V normally-off GaN transistor in a PG-TSON-6 package, measuring 3.10 mm by 5.10 mm, designed for high-efficiency power conversion in applications such as telecom, data centers, and e-mobility. It features a maximum drain-source on-state resistance of 1.8 mΩ at 25 °C, a continuous drain current of 86 A, and zero reverse recovery charge. The device has a gate charge of 12 nC and an output charge of 40 nC. The package includes an exposed die for top-side thermal performance and is qualified according to JEDEC for industrial applications. Reverse conduction capability and no reverse recovery charge are inherent to its GaN technology. Moisture sensitivity is rated MSL1, and its thermal resistance from junction to case (top) is 0.5 to 0.6 °C/W.
The IGC025S08S1 is a 80 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGC025S08S1 |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGC025S08S1 |
| Package Type | PG-TSON-6 |
