The IDW40E65D1 is a rapid-switching emitter-controlled diode designed for AC/DC converters, PFC boost stages, and free-wheeling applications in inverters and motor drives. It is packaged in a PG-TO247-3 case with a maximum repetitive peak reverse voltage of 650 V, a continuous forward current of 40 A, and a peak reverse recovery current of 17.75 A at 25°C junction temperature. The diode has a typical forward voltage of 1.35 V at 40 A and 25°C, supports a maximum junction operating temperature of 175°C, and features a thermal resistance from junction to case of 0.84 K/W. It is RoHS compliant with Pb-free lead plating.
Small Signal Switching Diodes IGBT PRODUCTS Rapid Switching Product overview: IDW40E65D1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Rectifiers, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2085-IDW40E65D1 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 2085-IDW40E65D1 |
| Product Name | IGBT Transistor |
| Package Type | Tube |
