Infineon Technologies AG 1200V 30A 180W IGBT Transistor G7PH30K10D

Description
IGBT 1200V 30A 180W TO247AC Product overview: G7PH30K10D from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A, 180W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 30A, 180W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-G7PH30K10D can be used for catalog matching and distributor lookup.
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Description
IGBT 1200V 30A 180W TO247AC Product overview: G7PH30K10D from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A, 180W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 30A, 180W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-G7PH30K10D can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
1200V 30A 180W IGBT Transistor
279-G7PH30K10D
1200V 30A 180W IGBT Transistor 279-G7PH30K10D
IGBT 1200V 30A 180W TO247AC Product overview: G7PH30K10D from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A, 180W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 30A, 180W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-G7PH30K10D can be used for catalog matching and distributor lookup.

IGBT 1200V 30A 180W TO247AC Product overview: G7PH30K10D from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 30A, 180W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 30A, 180W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-G7PH30K10D can be used for catalog matching and distributor lookup.

Supplier's Site
IGBTs - Single - G7PH30K10D - 204398-G7PH30K10D - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - G7PH30K10D
204398-G7PH30K10D
IGBTs - Single - G7PH30K10D 204398-G7PH30K10D
Manufacturer: Infineon Technologies Win Source Part Number: 204398-G7PH30K10D Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 140ns IGBT Type: Trench Input Type: Standard Gate Charge: 45nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AC Maximum Current Collector: 30A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 180W Pulsed Collector Current: 27A Collector-emitter saturation voltage(Max): 2.35V @ 15V, 9A Total Switching Energy(Ets): 530μJ (on), 380μJ (off) Turn-on and Turn-off delay time: 14ns/110ns Testing Conditions: 600V, 9A, 22 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 204398-G7PH30K10D
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 140ns
IGBT Type: Trench
Input Type: Standard
Gate Charge: 45nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Maximum Current Collector: 30A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 180W
Pulsed Collector Current: 27A
Collector-emitter saturation voltage(Max): 2.35V @ 15V, 9A
Total Switching Energy(Ets): 530μJ (on), 380μJ (off)
Turn-on and Turn-off delay time: 14ns/110ns
Testing Conditions: 600V, 9A, 22 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 279-G7PH30K10D 204398-G7PH30K10D
Product Name 1200V 30A 180W IGBT Transistor IGBTs - Single - G7PH30K10D
PD 180000 milliwatts 180000 milliwatts
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