The IDV15E65D2 is a rapid-switching emitter-controlled diode designed for boost diode applications in continuous conduction mode power factor correction. It is packaged in a FullPAK (PG-TO220-2-22 FP) with a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 15 A. The diode has a typical forward voltage of 1.6 V at 15 A and 25 °C, and an operating junction temperature range of -40 °C to +175 °C. It features low reverse recovery charge and soft switching characteristics. The device is Pb-free, RoHS compliant, and halogen-free according to IEC 61249-2-21. It is qualified according to JESD-022.
Small Signal Switching Diodes IGBT PRODUCTS Rapid Switching Product overview: IDV15E65D2 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Rectifiers, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2085-IDV15E65D2 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 2085-IDV15E65D2 |
| Product Name | IGBT Transistor |
| PD | 34 milliwatts |
