The GS61008P-TR is an enhancement mode gallium nitride power transistor in a GaNPX® bottom-side cooled package with a 7.6 x 4.6 mm² PCB footprint. It has a drain-source voltage rating of 100 V, a continuous drain current of 90 A at 25 °C case temperature, and a drain-source on-resistance of 7 mΩ. The device supports gate drive voltages from 0 V to 6 V with transient tolerance up to -20 V and +10 V, enables switching frequencies above 10 MHz, and exhibits zero reverse recovery loss. Thermal resistance junction-to-case is 0.55 °C/W. It is RoHS 3 (6 + 4) compliant and mounted on tape-and-reel packaging.
The GS61008P-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61008P-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | GS61008P-TR |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - GS61008P-TR |
| Package Type | PG-ULGA-5 |
