Infineon Technologies AG Power - Gallium nitride (GaN) - GaN transistors - GS61008P-TR GS61008P-TR

Description
The GS61008P-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61008P-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers. Summary of Features E-mode HEMT – normally OFF Ultrafast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness JEDEC qualified (JESD47, JESD22) Bottom-side cooled Zero reverse recovery loss Fast, controllable fall and rise times RoHS 3(6+4) compliant Benefits Improves system efficiency Improves power density Reduces system weight Enables higher operating frequency System cost reduction savings Applications 48 V intermediate bus converter (IBC) Audio amplifier solutions Power tools Servo motor drive and control
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Description
The GS61008P-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61008P-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers. Summary of Features E-mode HEMT – normally OFF Ultrafast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness JEDEC qualified (JESD47, JESD22) Bottom-side cooled Zero reverse recovery loss Fast, controllable fall and rise times RoHS 3(6+4) compliant Benefits Improves system efficiency Improves power density Reduces system weight Enables higher operating frequency System cost reduction savings Applications 48 V intermediate bus converter (IBC) Audio amplifier solutions Power tools Servo motor drive and control
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Power - Gallium nitride (GaN) - GaN transistors - GS61008P-TR - GS61008P-TR - Infineon Technologies AG
Neubiberg, Germany
Power - Gallium nitride (GaN) - GaN transistors - GS61008P-TR
GS61008P-TR
Power - Gallium nitride (GaN) - GaN transistors - GS61008P-TR GS61008P-TR
The GS61008P-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61008P-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers. Summary of Features E-mode HEMT – normally OFF Ultrafast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness JEDEC qualified (JESD47, JESD22) Bottom-side cooled Zero reverse recovery loss Fast, controllable fall and rise times RoHS 3(6+4) compliant Benefits Improves system efficiency Improves power density Reduces system weight Enables higher operating frequency System cost reduction savings Applications 48 V intermediate bus converter (IBC) Audio amplifier solutions Power tools Servo motor drive and control

The GS61008P-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61008P-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers.


Summary of Features

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Bottom-side cooled
  • Zero reverse recovery loss
  • Fast, controllable fall and rise times
  • RoHS 3(6+4) compliant

Benefits

  • Improves system efficiency
  • Improves power density
  • Reduces system weight
  • Enables higher operating frequency
  • System cost reduction savings

Applications

  • 48 V intermediate bus converter (IBC)
  • Audio amplifier solutions
  • Power tools
  • Servo motor drive and control
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Transistors
Product Number GS61008P-TR
Product Name Power - Gallium nitride (GaN) - GaN transistors - GS61008P-TR
Package Type PG-ULGA-5
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