Infineon Technologies AG IGBT Discretes IGB15N60T

Description
600 V, 15 A IGBT Discrete in TO263 package Hard-switching 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability
  • IGBT Discretes - IGB15N60T - Infineon Technologies AG
    Infineon Technologies AG
  • IGBTs - Single - IGB15N60T - 068743-IGB15N60T - Win Source Electronics
    Win Source Electronics
  • Transistors - IGB15N60T - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
600 V, 15 A IGBT Discrete in TO263 package Hard-switching 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IGB15N60T - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IGB15N60T
IGBT Discretes IGB15N60T
600 V, 15 A IGBT Discrete in TO263 package Hard-switching 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The highest efficiency is reached due to the best compromise between switching and conduction losses. Summary of Features Lowest VCEsat drop for lower conduction losses Low switching losses Easy parallel switching capability due to positive temperature coefficient in VCEsat High ruggedness, temperature stable behavior Low EMI emissions Low gate charge Very tight parameter distribution Benefits Highest efficiency – low conduction and switching losses Comprehensive portfolio in 600 V and 1200 V for flexibility of design High device reliability

600 V, 15 A IGBT Discrete in TO263 package

Hard-switching 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The highest efficiency is reached due to the best compromise between switching and conduction losses.


Summary of Features

  • Lowest VCEsat drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability
Supplier's Site Datasheet
IGBTs - Single - IGB15N60T - 068743-IGB15N60T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IGB15N60T
068743-IGB15N60T
IGBTs - Single - IGB15N60T 068743-IGB15N60T
Manufacturer: Infineon Technologies Win Source Part Number: 068743-IGB15N60T Packaging: Reel - TR Mounting: SMD (SMT) IGBT Type: Trench Input Type: Standard Gate Charge: 87nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 175°C (TJ) Case / Package: PG-TO263-3-2 Maximum Current Collector: 30A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 130W Pulsed Collector Current: 45A Collector-emitter saturation voltage(Max): 2.05V @ 15V, 15A Total Switching Energy(Ets): 570μJ Turn-on and Turn-off delay time: 17ns/188ns Testing Conditions: 400V, 15A, 15 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 068743-IGB15N60T
Packaging: Reel - TR
Mounting: SMD (SMT)
IGBT Type: Trench
Input Type: Standard
Gate Charge: 87nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO263-3-2
Maximum Current Collector: 30A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 130W
Pulsed Collector Current: 45A
Collector-emitter saturation voltage(Max): 2.05V @ 15V, 15A
Total Switching Energy(Ets): 570μJ
Turn-on and Turn-off delay time: 17ns/188ns
Testing Conditions: 400V, 15A, 15 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
600V 15A IGBT Transistor
279-IGB15N60T
600V 15A IGBT Transistor 279-IGB15N60T
IGBTs LOW LOSS IGBT TECH 600V 15A Product overview: IGB15N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 15A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 15A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGB15N60T can be used for catalog matching and distributor lookup.

IGBTs LOW LOSS IGBT TECH 600V 15A Product overview: IGB15N60T from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 15A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 15A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGB15N60T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IGB15N60T
IGBT Transistors IGB15N60T
IGBT Transistors LOW LOSS IGBT TECH 600V 15A

IGBT Transistors LOW LOSS IGBT TECH 600V 15A

Buy Now Datasheet
Transistors - IGB15N60T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IGB15N60T
Transistors IGB15N60T
IGBT Transistors LOW LOSS IGBT TECH 600V 15A

IGBT Transistors LOW LOSS IGBT TECH 600V 15A

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Transistors
Product Number IGB15N60T 068743-IGB15N60T 279-IGB15N60T IGB15N60T IGB15N60T
Product Name IGBT Discretes IGBTs - Single - IGB15N60T 600V 15A IGBT Transistor IGBT Transistors Transistors
VCE(on) 600 volts 2.05 volts
Switching Speed 2 to 20 kHz
tr 11 ns
tf 50 ns
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