Infineon Technologies AG IGBTs - Single - GB5B120KD GB5B120KD

Manufacturer: Infineon Technologies
Win Source Part Number: 040391-GB5B120KD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 160ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 25nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 12A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 89W
Pulsed Collector Current: 24A
Collector-emitter saturation voltage(Max): 3V @ 15V, 6A
Total Switching Energy(Ets): 390μJ (on), 330μJ (off)
Turn-on and Turn-off delay time: 22ns/100ns
Testing Conditions: 600V, 6A, 50 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

IGBT 1200V 12A 89W TO220AB Product overview: GB5B120KD from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 12A, 89W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 12A, 89W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-GB5B120KD can be used for catalog matching and distributor lookup.