IGBT 1200V 9.6A 62.5W TO263-3 Product overview: IGB03N120H2ATMA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 9.6A, 62.5W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 9.6A, 62.5W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGB03N120H2ATMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 776685-IGB03N120H2AT
Packaging: Reel package
Operating Temperature Range: -40°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Power - Max: 62.5W
Current - Collector Pulsed (Icm): 9.9A
Switching Energy: 290μJ
Input Type: Standard
Gate Charge: 22nC
Td (on/off) @ 25°C: 9.2ns/281ns
Test Condition: 800V, 3A, 82 Ohm, 15V
Family Name: IGB03N120H2ATMA1
Categories: Discrete Semiconductor Products
Manufacturer Package: PG-TO263-3
Current - Collector (Ic) (Maximum): 9.6A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Vce(on) (Maximum) @ Vge, Ic: 2.8V @ 15V, 3A
Alternative Parts (Cross-Reference): HGT1S2N120BNDS; HGT1S2N120CNDS; HGT1S2N120CN_NL; HGT1S2N120CNS;
Introduction Date: March 11, 2003
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
IGBT 1200V 9.6A 62.5W Surface Mount PG-TO263-3-2
IGBT 1200V 9.6A 62.5W TO263-3
IGBT 1200V 9.6A 62.5W TO263-3
IGBT 1200V 9.6A 62.5W TO263-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-IGB03N120H2ATMA1 | 776685-IGB03N120H2ATMA1 | 448-IGB03N120H2ATMA1TR-ND | IGB03N120H2ATMA1 | 376-IGB03N120H2ATMA1 | IGB03N120H2ATMA1 |
| Product Name | 1200V 9.6A 62.5W IGBT Transistor | IGBTs - Single - IGB03N120H2ATMA1 | Single IGBTs | Single IGBTs | IGBT 1200V 9.6A 62.5W TO263-3 | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
| Package Type | Tape & Reel (TR) | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel package | Tape Reel | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | |
| VCES | 1200 volts |
