The IGB08N120S7 is a 1200 V, 8 A TRENCHSTOP™ IGBT 7 discrete device in a PG-TO-263-3-2 package with a collector tab, designed for industrial motor drives. It features a maximum collector-emitter voltage of 1200 V, a continuous collector current of 8 A, and a saturation voltage of 2 V at 150 °C junction temperature. The device has short-circuit ruggedness of 8 µs and a gate-emitter voltage rating of ±20 V. Thermal resistance from junction to case is 1.07 to 1.44 K/W, and junction temperature operates from −40 °C to 150 °C. It is qualified for industrial applications according to JEDEC J-STD-020 and is not AEC-Q100 qualified.
Hard-switching 1200 V, 8 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-263 package which offers low VCEsat to achieve very low conduction losses in target applications.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IGB08N120S7 |
| Product Name | Power - IGBT - IGBT Discretes - IGB08N120S7 |
| VCE(on) | 1200 volts |
| Switching Speed | 2 to 20 kHz |
| tr | 18 ns |
