Infineon Technologies AG IGBTs - Single - IGB20N60H3 IGB20N60H3

Manufacturer: Infineon Technologies
Win Source Part Number: 121535-IGB20N60H3
Packaging: Reel - TR
Mounting: SMD (SMT)
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 120nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: PG-TO263-3
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 170W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 20A
Total Switching Energy(Ets): 690μJ
Turn-on and Turn-off delay time: 16ns/194ns
Testing Conditions: 400V, 20A, 14.6 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

IGBTs 600v Hi-Speed SW IGBT Product overview: IGB20N60H3 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600v. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600v. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IGB20N60H3 can be used for catalog matching and distributor lookup.

IGBT Transistors 600v Hi-Speed SW IGBT