The IGB110S101 is a 100 V normally-off GaN transistor designed for high-efficiency switching in applications such as telecom, DC-DC converters, and e-mobility. It is housed in a PG-VSON-4 package measuring 3.1 mm × 3.1 mm with a 0.55 mm pitch. The device features a drain-source on-state resistance of 9.4 mΩ, a total gate charge of 3.4 nC, and zero reverse recovery charge. It supports a continuous drain current of 23 A and is qualified to JEDEC JESD47, JESD22, and J-STD-020 standards for industrial applications. The transistor operates with a gate-source voltage range of -4.0 V to 5.5 V and includes a bottom-side thermal pad for improved thermal management.
The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGB110S101 |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGB110S101 |
| Package Type | PG-VSON-4 |
