The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
Summary of Features
100 V e-mode power transistor
Bottom-side cooled package
No reverse recovery charge
Reverse conduction capability
Low gate charge, low output charge
Qualified according to JEDEC
Benefits
Best-in-class power density
Highest efficiency
Improved thermal management
Enabling smaller and lighter designs
Excellent reliability
Lowering BOM cost
Applications
Audio amplifier solutions
Low power BDC/BLDC motor drives up to 72 V
Photovoltaic
Telecommunication infrastructure
The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
Summary of Features
- 100 V e-mode power transistor
- Bottom-side cooled package
- No reverse recovery charge
- Reverse conduction capability
- Low gate charge, low output charge
- Qualified according to JEDEC
Benefits
- Best-in-class power density
- Highest efficiency
- Improved thermal management
- Enabling smaller and lighter designs
- Excellent reliability
- Lowering BOM cost
Applications
- Audio amplifier solutions
- Low power BDC/BLDC motor drives up to 72 V
- Photovoltaic
- Telecommunication infrastructure
