600 V, 30 A IGBT3 in TO263 D2Pak package
High speed 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
Summary of Features
Low switching losses for high efficiency
Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability 5µs
Offering Tj(max) of 175°C
Packaged with and without freewheeling diode for increased design freedom
Benefits
Low switching and conduction losses
Very good EMI behavior
Can be used with a small gate resistor for reduced delay time and voltage overshoot
High current density
Best-in-class 600 V IGBT efficiency and EMI behavior
Applications
Photovoltaic
Uninterruptible power supplies (UPS)
600 V, 30 A IGBT3 in TO263 D2Pak package
High speed 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
Summary of Features
- Low switching losses for high efficiency
- Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability 5µs
- Offering Tj(max) of 175°C
- Packaged with and without freewheeling diode for increased design freedom
Benefits
- Low switching and conduction losses
- Very good EMI behavior
- Can be used with a small gate resistor for reduced delay time and voltage overshoot
- High current density
- Best-in-class 600 V IGBT efficiency and EMI behavior
Applications
- Photovoltaic
- Uninterruptible power supplies (UPS)
