The IDP15E65D1 is a 650 V rapid-switching emitter-controlled diode designed for use in AC/DC converters, PFC boost stages, and free-wheeling applications in inverters and motor drives. It comes in a PG-TO220-2-1 package and operates with a maximum junction temperature of 175°C. The diode has a forward voltage of 1.35 V at 15 A and 25°C, a repetitive peak reverse voltage of 650 V, and a non-repetitive peak forward surge current of 120 A. It is RoHS compliant and features temperature-stable parameters. Thermal resistance from junction to case is 1.64 K/W.
Small Signal Switching Diodes IGBT PRODUCTS Rapid Switching Product overview: IDP15E65D1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Rectifiers, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2085-IDP15E65D1 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 2085-IDP15E65D1 |
| Product Name | IGBT Transistor |
| PD | 92 milliwatts |
