Infineon Technologies AG Power - IGBT - IGBT Discretes - IGB15N120S7 IGB15N120S7

The IGB15N120S7 is a 1200 V, 15 A TRENCHSTOP™ IGBT 7 discrete device in a PG-TO-263-3-STD-C1.6 package. It features a collector-emitter saturation voltage of 2 V at 150°C junction temperature and short-circuit ruggedness of 8 µs. The device has a maximum collector current of 15 A, a gate-emitter voltage rating of ±20 V, and a power dissipation of 141 W at 25°C case temperature. Thermal resistance from junction to case is 0.66 to 0.89 K/W, and junction temperature ranges from -40°C to 150°C. It is qualified for industrial applications according to JEDEC J-STD-020, and is not AEC-Q100 or AEC-Q101 qualified.