The IDW30E65D1 is a rapid-switching emitter-controlled diode designed for AC/DC converters, PFC stages, and free-wheeling applications in inverters and motor drives. It is packaged in a PG-TO247-3 case with a maximum junction operating temperature of 175°C. The diode has a repetitive peak reverse voltage of 650 V, a continuous forward current of 30 A, and a typical forward voltage of 1.35 V at 30 A and 25°C. It features low reverse recovery charge and peak reverse recovery current, with a reverse recovery time dependent on current slope. The device is Pb-free, RoHS compliant, and meets thermal resistance specifications of 1.06 K/W from junction to case and 40 K/W from junction to ambient.
Small Signal Switching Diodes IGBT PRODUCTS Rapid Switching Product overview: IDW30E65D1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Rectifiers, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2085-IDW30E65D1 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 2085-IDW30E65D1 |
| Product Name | IGBT Transistor |
| PD | 142 milliwatts |
