Infineon Technologies AG Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT Bare Dies - IDC52D75H8DA IDC52D75H8DA

Description
Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights. Summary of Features Best-in-class current density Suitable for 470 V VDC systems Maximum junction temperature of 185 °C High switching speed Very low switching losses Very tight parameter distribution Double side solderable and sinterable Product validation acc. to AEC-Q101 Benefits Ideal for automotive requirements Available in 750 V and 1200 V class Customized development (on demand) Decreased losses and increased max. Tvj Cost benefit due to module shrink Low costs per Ampere on system level Less parallelization effort and costs High reliability and quality Drop-in replacement
Request a Quote Datasheet
Description
Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights. Summary of Features Best-in-class current density Suitable for 470 V VDC systems Maximum junction temperature of 185 °C High switching speed Very low switching losses Very tight parameter distribution Double side solderable and sinterable Product validation acc. to AEC-Q101 Benefits Ideal for automotive requirements Available in 750 V and 1200 V class Customized development (on demand) Decreased losses and increased max. Tvj Cost benefit due to module shrink Low costs per Ampere on system level Less parallelization effort and costs High reliability and quality Drop-in replacement
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT Bare Dies - IDC52D75H8DA - IDC52D75H8DA - Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT Bare Dies - IDC52D75H8DA
IDC52D75H8DA
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT Bare Dies - IDC52D75H8DA IDC52D75H8DA
Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights. Summary of Features Best-in-class current density Suitable for 470 V VDC systems Maximum junction temperature of 185 °C High switching speed Very low switching losses Very tight parameter distribution Double side solderable and sinterable Product validation acc. to AEC-Q101 Benefits Ideal for automotive requirements Available in 750 V and 1200 V class Customized development (on demand) Decreased losses and increased max. Tvj Cost benefit due to module shrink Low costs per Ampere on system level Less parallelization effort and costs High reliability and quality Drop-in replacement

Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.


Summary of Features

  • Best-in-class current density
  • Suitable for 470 V VDC systems
  • Maximum junction temperature of 185 °C
  • High switching speed
  • Very low switching losses
  • Very tight parameter distribution
  • Double side solderable and sinterable
  • Product validation acc. to AEC-Q101

Benefits

  • Ideal for automotive requirements
  • Available in 750 V and 1200 V class
  • Customized development (on demand)
  • Decreased losses and increased max. Tvj
  • Cost benefit due to module shrink
  • Low costs per Ampere on system level
  • Less parallelization effort and costs
  • High reliability and quality
  • Drop-in replacement
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IDC52D75H8DA
Product Name Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT Bare Dies - IDC52D75H8DA
Packing Method HORIZONTAL FRAME SHIPPER
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