Infineon Technologies AG IGBT Discretes IGB50N65S5

Description
650 V, 50 A IGBT Discrete in TO-263 package High speed 650 V, 50 A soft-switching TRENCHSTOP™ 5 in D2Pak (TO263) package IGBT, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. Summary of Features Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5 I C(n)=four times nominal current (100°C Tc) Soft current fall characteristics with no tail current Symmetrical, low voltage overshoot Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping Maximum junction temperature Tvj=175°C Qualified according to JEDEC standards Benefits VCE(peak) clamping circuits not required Suitable for use with single turn-on / turn-off gate resistor No need for gate clamping components Gate drivers with Miller clamping not required Reduction in the EMI filtering needed Excellent for paralleling Applications Energy Storage Systems Integrated and discrete solutions for Personal Care products Photovoltaic Uninterruptible power supplies (UPS)
Request a Quote
Description
650 V, 50 A IGBT Discrete in TO-263 package High speed 650 V, 50 A soft-switching TRENCHSTOP™ 5 in D2Pak (TO263) package IGBT, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. Summary of Features Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5 I C(n)=four times nominal current (100°C Tc) Soft current fall characteristics with no tail current Symmetrical, low voltage overshoot Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping Maximum junction temperature Tvj=175°C Qualified according to JEDEC standards Benefits VCE(peak) clamping circuits not required Suitable for use with single turn-on / turn-off gate resistor No need for gate clamping components Gate drivers with Miller clamping not required Reduction in the EMI filtering needed Excellent for paralleling Applications Energy Storage Systems Integrated and discrete solutions for Personal Care products Photovoltaic Uninterruptible power supplies (UPS)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

IGB50N65S5 is a 650 V, 50 A TRENCHSTOP™ 5 high-speed soft-switching IGBT in a PG-TO263-3 package. It has a collector-emitter saturation voltage of 1.35 V at 25°C and a maximum junction temperature of 175°C. The device supports a continuous collector current of 86 A at 25°C and a pulsed collector current of 200 A. Thermal resistance is 0.55 K/W from junction to case and 40 K/W from junction to ambient with a 6 cm² copper area. Input, output, and reverse transfer capacitances are 3000 pF, 50 pF, and 11 pF respectively, with a gate charge of 120 nC. Switching energy losses are 0.74 mJ turn-off and 1.97 mJ total at 25°C under inductive load. The device is validated for industrial applications according to relevant test standards.

Datasheet Summary
Powered by GS/AI

IGB50N65S5 is a 650 V, 50 A TRENCHSTOP™ 5 high-speed soft-switching IGBT in a PG-TO263-3 package. It has a collector-emitter saturation voltage of 1.35 V at 25°C and a maximum junction temperature of 175°C. The device supports a continuous collector current of 86 A at 25°C and a pulsed collector current of 200 A. Thermal resistance is 0.55 K/W from junction to case and 40 K/W from junction to ambient with a 6 cm² copper area. Input, output, and reverse transfer capacitances are 3000 pF, 50 pF, and 11 pF respectively, with a gate charge of 120 nC. Switching energy losses are 0.74 mJ turn-off and 1.97 mJ total at 25°C under inductive load. The device is validated for industrial applications according to relevant test standards.

Suppliers

Company
Product
Description
Supplier Links
IGBT Discretes - IGB50N65S5 - Infineon Technologies AG
Neubiberg, Germany
IGBT Discretes
IGB50N65S5
IGBT Discretes IGB50N65S5
650 V, 50 A IGBT Discrete in TO-263 package High speed 650 V, 50 A soft-switching TRENCHSTOP™ 5 in D2Pak (TO263) package IGBT, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. Summary of Features Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5 I C(n)=four times nominal current (100°C Tc) Soft current fall characteristics with no tail current Symmetrical, low voltage overshoot Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping Maximum junction temperature Tvj=175°C Qualified according to JEDEC standards Benefits VCE(peak) clamping circuits not required Suitable for use with single turn-on / turn-off gate resistor No need for gate clamping components Gate drivers with Miller clamping not required Reduction in the EMI filtering needed Excellent for paralleling Applications Energy Storage Systems Integrated and discrete solutions for Personal Care products Photovoltaic Uninterruptible power supplies (UPS)

650 V, 50 A IGBT Discrete in TO-263 package

High speed 650 V, 50 A soft-switching TRENCHSTOP™ 5 in D2Pak (TO263) package IGBT, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.


Summary of Features

  • Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
  • I C(n)=four times nominal current (100°C Tc)
  • Soft current fall characteristics with no tail current
  • Symmetrical, low voltage overshoot
  • Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
  • Maximum junction temperature Tvj=175°C
  • Qualified according to JEDEC standards

Benefits

  • VCE(peak) clamping circuits not required
  • Suitable for use with single turn-on / turn-off gate resistor
  • No need for gate clamping components
  • Gate drivers with Miller clamping not required
  • Reduction in the EMI filtering needed
  • Excellent for paralleling

Applications

  • Energy Storage Systems
  • Integrated and discrete solutions for Personal Care products
  • Photovoltaic
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IGB50N65S5
Product Name IGBT Discretes
VCE(on) 650 volts
Switching Speed 2 to 20 kHz
tr 30 ns
Unlock Full Specs
to access all available technical data

Similar Products

 - 2ED21091S06FXUMA1 - Rochester Electronics
Infineon Technologies AG
Specs
Package Type SO-8; PG-DSO-8
Packing Method Tape Reel; Tape & Reel
View Details
Single IGBTs - 448-AIGB30N65H5ATMA1TR-ND - DigiKey
Infineon Technologies AG
Specs
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packing Method Tape Reel
Structure NPT
View Details
4 suppliers