IGB50N65S5 is a 650 V, 50 A TRENCHSTOP™ 5 high-speed soft-switching IGBT in a PG-TO263-3 package. It has a collector-emitter saturation voltage of 1.35 V at 25°C and a maximum junction temperature of 175°C. The device supports a continuous collector current of 86 A at 25°C and a pulsed collector current of 200 A. Thermal resistance is 0.55 K/W from junction to case and 40 K/W from junction to ambient with a 6 cm² copper area. Input, output, and reverse transfer capacitances are 3000 pF, 50 pF, and 11 pF respectively, with a gate charge of 120 nC. Switching energy losses are 0.74 mJ turn-off and 1.97 mJ total at 25°C under inductive load. The device is validated for industrial applications according to relevant test standards.
650 V, 50 A IGBT Discrete in TO-263 package
High speed 650 V, 50 A soft-switching TRENCHSTOP™ 5 in D2Pak (TO263) package IGBT, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IGB50N65S5 |
| Product Name | IGBT Discretes |
| VCE(on) | 650 volts |
| Switching Speed | 2 to 20 kHz |
| tr | 30 ns |