Manufacturer: Infineon Technologies
Win Source Part Number: 067684-GPS60B120KDP
Packaging: Bulk
Mounting: Through Hole
Reverse Recovery Time (trr): 180ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 340nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SUPER-247 (TO-274AA)
Maximum Current Collector: 105A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 595W
Pulsed Collector Current: 240A
Collector-emitter saturation voltage(Max): 2.75V @ 15V, 60A
Total Switching Energy(Ets): 3.21mJ (on), 4.78mJ (off)
Testing Conditions: 600V, 15A, 4.7 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
IGBT 1200V 105A 595W SUPER247 Product overview: GPS60B120KDP from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 105A, 595W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 105A, 595W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-GPS60B120KDP can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 067684-GPS60B120KDP | 279-GPS60B120KDP |
| Product Name | IGBTs - Single - GPS60B120KDP | 1200V 105A 595W IGBT Transistor |
| VCE(on) | 2.75 volts |
