The IGC019S06S1 is a 60 V enhancement-mode GaN transistor in a PG-TSON-6 package, designed for high-efficiency switching in applications such as battery-powered tools, telecom, and e-mobility. It features an exposed die for top-side thermal performance, ultra-low gate charge of 13 nC, and zero reverse recovery charge. The device has a maximum continuous drain current of 99 A and a drain-source on-resistance of 1.3 mΩ at 25 °C. It is fully qualified according to JEDEC for industrial applications and has a moisture sensitivity level of MSL1.
The IGB019S06S1 is a 60 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGC019S06S1 |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGC019S06S1 |
| Package Type | PG-TSON-6 |
