Vincotech GmbH Power IGBT Transistor 10-0B126PA004SC-M997F09

Description
Features IGBT4 (1200V) technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Dedicated design for motor drive
  • Power IGBT Transistor - 10-0B126PA004SC-M997F09 - Richardson RFPD
    Richardson RFPD
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Description
Features IGBT4 (1200V) technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Dedicated design for motor drive
Request a Quote

Suppliers

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Power IGBT Transistor - 10-0B126PA004SC-M997F09 - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
10-0B126PA004SC-M997F09
Power IGBT Transistor 10-0B126PA004SC-M997F09
Features IGBT4 (1200V) technology Open emitter topology New ultra-compact housing Single-screw heat sink mounting Applications Dedicated design for motor drive

Features

  • IGBT4 (1200V) technology
  • Open emitter topology
  • New ultra-compact housing
  • Single-screw heat sink mounting

Applications

  • Dedicated design for motor drive
Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 10-0B126PA004SC-M997F09
Product Name Power IGBT Transistor
Package Type flow 0B
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