Infineon Technologies AG Power - IGBT - CoolSiC™ hybrid devices - hybrid discretes - AIKBE50N65RF5 AIKBE50N65RF5

Description
Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC. Summary of Features 650 V breakdown voltage IC = 50 A Best-in-class efficiency Trenchstop™ 5 fast-switching IGBT CoolSiC™ Schottky diode G5 Low gate charge QG Maximum junction temperature Tvjmax = 175°C Kelvin emitter connection Benefits Highest reliability against environmental conditions Increased system efficiency Best performance/cost ratio for hard switching topologies Supporting bi-directional On-Board Charger designs Potential Applications • On-board charger • DC/DC converter
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Description
Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC. Summary of Features 650 V breakdown voltage IC = 50 A Best-in-class efficiency Trenchstop™ 5 fast-switching IGBT CoolSiC™ Schottky diode G5 Low gate charge QG Maximum junction temperature Tvjmax = 175°C Kelvin emitter connection Benefits Highest reliability against environmental conditions Increased system efficiency Best performance/cost ratio for hard switching topologies Supporting bi-directional On-Board Charger designs Potential Applications • On-board charger • DC/DC converter
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Datasheet
Datasheet Summary
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The AIKBE50N65RF5 is a CoolSiC™ hybrid discrete semiconductor integrating a 650 V TRENCHSTOP™ 5 fast-switching IGBT and a CoolSiC™ Schottky diode G5 for automotive power conversion applications such as on-board chargers and DC/DC converters. It is packaged in a PG-TO263-7-HV-ND4.2 case with a Kelvin emitter connection to optimize switching performance. The device supports a maximum junction temperature of 175°C, a continuous collector current of 50 A, and a collector-emitter voltage rating of 650 V. It meets AEC-Q100/101 qualification standards for automotive applications.

Datasheet Summary
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The AIKBE50N65RF5 is a CoolSiC™ hybrid discrete semiconductor integrating a 650 V TRENCHSTOP™ 5 fast-switching IGBT and a CoolSiC™ Schottky diode G5 for automotive power conversion applications such as on-board chargers and DC/DC converters. It is packaged in a PG-TO263-7-HV-ND4.2 case with a Kelvin emitter connection to optimize switching performance. The device supports a maximum junction temperature of 175°C, a continuous collector current of 50 A, and a collector-emitter voltage rating of 650 V. It meets AEC-Q100/101 qualification standards for automotive applications.

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Power - IGBT - CoolSiC™ hybrid devices - hybrid discretes - AIKBE50N65RF5 - AIKBE50N65RF5 - Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - CoolSiC™ hybrid devices - hybrid discretes - AIKBE50N65RF5
AIKBE50N65RF5
Power - IGBT - CoolSiC™ hybrid devices - hybrid discretes - AIKBE50N65RF5 AIKBE50N65RF5
Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC. Summary of Features 650 V breakdown voltage IC = 50 A Best-in-class efficiency Trenchstop™ 5 fast-switching IGBT CoolSiC™ Schottky diode G5 Low gate charge QG Maximum junction temperature Tvjmax = 175°C Kelvin emitter connection Benefits Highest reliability against environmental conditions Increased system efficiency Best performance/cost ratio for hard switching topologies Supporting bi-directional On-Board Charger designs Potential Applications • On-board charger • DC/DC converter

Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC.


Summary of Features

  • 650 V breakdown voltage
  • IC = 50 A
  • Best-in-class efficiency
  • Trenchstop™ 5 fast-switching IGBT
  • CoolSiC™ Schottky diode G5
  • Low gate charge QG
  • Maximum junction temperature Tvjmax = 175°C
  • Kelvin emitter connection

Benefits

  • Highest reliability against environmental conditions
  • Increased system efficiency
  • Best performance/cost ratio for hard switching topologies
  • Supporting bi-directional On-Board Charger designs

Potential Applications

• On-board charger

• DC/DC converter

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number AIKBE50N65RF5
Product Name Power - IGBT - CoolSiC™ hybrid devices - hybrid discretes - AIKBE50N65RF5
Switching Speed 0.0400 to 0.1000 kHz
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