Infineon Technologies AG Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB20N60CT AIKB20N60CT

Description
Infineon's Discrete IGBT TRENCHSTOP™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed. Summary of Features Very low V CEsat 1.5V (typ.) Maximum junction temperature 175°C Short circuit withstand time 5µs Positive temperature coefficient in V CEsat Low EMI Low gate charge Green package Very soft, fast recovery anti-parallel Emitter Controlled HE diode Potential Applications Main inverter AirCon compressor PTC heater Motor drives Applications Automotive battery management system (BMS) EV traction inverter The AIKB20N60CT replaces the well known IKB20N60TA
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Description
Infineon's Discrete IGBT TRENCHSTOP™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed. Summary of Features Very low V CEsat 1.5V (typ.) Maximum junction temperature 175°C Short circuit withstand time 5µs Positive temperature coefficient in V CEsat Low EMI Low gate charge Green package Very soft, fast recovery anti-parallel Emitter Controlled HE diode Potential Applications Main inverter AirCon compressor PTC heater Motor drives Applications Automotive battery management system (BMS) EV traction inverter The AIKB20N60CT replaces the well known IKB20N60TA
Request a Quote Datasheet

Suppliers

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Product
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Supplier Links
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB20N60CT - AIKB20N60CT - Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB20N60CT
AIKB20N60CT
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB20N60CT AIKB20N60CT
Infineon's Discrete IGBT TRENCHSTOP™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed. Summary of Features Very low V CEsat 1.5V (typ.) Maximum junction temperature 175°C Short circuit withstand time 5µs Positive temperature coefficient in V CEsat Low EMI Low gate charge Green package Very soft, fast recovery anti-parallel Emitter Controlled HE diode Potential Applications Main inverter AirCon compressor PTC heater Motor drives Applications Automotive battery management system (BMS) EV traction inverter The AIKB20N60CT replaces the well known IKB20N60TA

Infineon's Discrete IGBT TRENCHSTOP™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed.


Summary of Features

  • Very low V CEsat 1.5V (typ.)
  • Maximum junction temperature 175°C
  • Short circuit withstand time 5µs
  • Positive temperature coefficient in V CEsat
  • Low EMI
  • Low gate charge
  • Green package
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode

Potential Applications

  • Main inverter
  • AirCon compressor
  • PTC heater
  • Motor drives

Applications

  • Automotive battery management system (BMS)
  • EV traction inverter

The AIKB20N60CT replaces the well known IKB20N60TA

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number AIKB20N60CT
Product Name Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB20N60CT
VCE(on) 600 volts
tr 14 ns
tf 42 ns
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